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MBE Growth and Characterization of Device-Quality Thick InN Epilayers; Comparison between N-polarity and In-polarity Growth Processes

Published online by Cambridge University Press:  01 February 2011

Akihiko Yoshikawa ,
Yoshihiro Ishitani ,
Song-Bek Che ,
Ke Xu ,
Xinqiang Wang ,
Masayoshi Yoshitani ,
Wataru Terashima  and
Naoki Hashimoto
Akihiko Yoshikawa
Affiliation:
Department of Electronics and Mechanical Engineering Center for Frontier Electronics and Photonics InN-project as a CREST program of JST, Chiba University 1–33 Yayoi-cho, Inage-ku, Chiba 263–8522, Japan
Yoshihiro Ishitani
Affiliation:
Department of Electronics and Mechanical Engineering Center for Frontier Electronics and Photonics InN-project as a CREST program of JST, Chiba University 1–33 Yayoi-cho, Inage-ku, Chiba 263–8522, Japan
Song-Bek Che
Affiliation:
Department of Electronics and Mechanical Engineering Center for Frontier Electronics and Photonics InN-project as a CREST program of JST, Chiba University 1–33 Yayoi-cho, Inage-ku, Chiba 263–8522, Japan
Ke Xu
Affiliation:
InN-project as a CREST program of JST, Chiba University 1–33 Yayoi-cho, Inage-ku, Chiba 263–8522, Japan
Xinqiang Wang
Affiliation:
Center for Frontier Electronics and Photonics InN-project as a CREST program of JST, Chiba University 1–33 Yayoi-cho, Inage-ku, Chiba 263–8522, Japan
Masayoshi Yoshitani
Affiliation:
Department of Electronics and Mechanical Engineering
Wataru Terashima
Affiliation:
Department of Electronics and Mechanical Engineering
Naoki Hashimoto
Affiliation:
Department of Electronics and Mechanical Engineering
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Abstract

Epitaxy of InN films with N-polarity and In-polarity was investigated by RF-MBE with several in-situ monitoring/controlling systems. It was found that the epitaxy temperature for N-polarity growth could be as high as 600 °C and this was about 100 deg higher than that for In-polarity case. This temperature difference in two polarities drastically affected not only the growth behaviors but also the properties of InN epilayers, i.e. N-polarity growth was preferable in both view-points. The step-flow-like surface morphology was achieved for the InN films grown with N-polarity at 580 °C. The FWHMs of X-ray rocking curves for InN (002) and (102) of 5–8 μm-thick InN films grown in N-polarity were about 200–350 and 650–950 arcsec, respectively. The highest Hall mobility was above 2000 cm2/V·s with a background carrier concentration of 1–2×1018 cm−3 at room temperature. For both polarity films, N-rich condition was necessary for the stable InN growth to obtain 5–8 μm-thick InN films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 831: Symposium E – GaN, AlN, InN, and Their Alloys , 2004 , E4.1
Copyright
Copyright © Materials Research Society 2005

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