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Mbe Growth And Characterization Of Er/O And Er/F Doped Si Light Emitting Structures

Published online by Cambridge University Press:  10 February 2011

W.-X. Ni ,
C.-X. Du ,
K. B Joelsson ,
G. V. Hansson ,
G. Pozina ,
I. A. Buyanova ,
W. M. Chen  and
B. Monemar
W.-X. Ni
Affiliation:
Surface and semiconductor physics division, Dept. of Physics, Linköping University, S-581 83 Linköping, Sweden
C.-X. Du
Affiliation:
Surface and semiconductor physics division, Dept. of Physics, Linköping University, S-581 83 Linköping, Sweden
K. B Joelsson
Affiliation:
Surface and semiconductor physics division, Dept. of Physics, Linköping University, S-581 83 Linköping, Sweden
G. V. Hansson
Affiliation:
Surface and semiconductor physics division, Dept. of Physics, Linköping University, S-581 83 Linköping, Sweden
G. Pozina
Affiliation:
Materials science division, Dept. of Physics, Linköping University, S-581 83 Linköping, Sweden
I. A. Buyanova
Affiliation:
Materials science division, Dept. of Physics, Linköping University, S-581 83 Linköping, Sweden
W. M. Chen
Affiliation:
Materials science division, Dept. of Physics, Linköping University, S-581 83 Linköping, Sweden
B. Monemar
Affiliation:
Materials science division, Dept. of Physics, Linköping University, S-581 83 Linköping, Sweden
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Abstract

By using a low temperature growth process, Er doping in Si during MBE using Er2O3 or ErF3 as dopant sources has achieved a level of 5 × 1019 cm−3 without precipitation and generation of other extended defects. Luminescence properties of these Er-doped MBE Si structures have been extensively studied using both photon and hot electron impact excitation at a wide range of temperatures (2–300 K). It has been found that by incorporating C into Er/O doped layers, the room temperature EL emission with a FWHM value of 14 meV was ten times more intense than that with lower C doping. Post thermal annealing gave a strong effect on Er/F doped layers, leading to a 7-fold increase of the highest peak intensity while the peak line width reduced to 0.12 meV, which is very important for laser applications.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 486: Symposium H – Materials & Devices for Silicon Based Optoelectronics , 1997 , 133
Copyright
Copyright © Materials Research Society 1998

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References

1. Franzò, G., Priolo, F., Coffa, S., Polman, A., and Camera, A., Appl. Phys. Lett. 64, 2235 (1994).Google Scholar
2. Stimmer, J., Reittinger, A., Nützel, J.F., Abstreiter, G., Holzbrecher, H., and Buchal, Ch., App. Phys. Lett. 68, 3290 (1996).Google Scholar
3. Ni, W.-X., Joelsson, K.B., Du, C.-X., Pozina, G., Buyanova, I.A., Chen, W.M., Hansson, G.V., Monemar, B., Cardenas, J. and Svensson, B.G., Appl. Phys. Lett. 70, 3383 (1997).Google Scholar
4. Polman, A., J. Appl. Phys. 82, 1 (1997).Google Scholar
5. Efeoglu, H., Evans, J. H., Jackman, T.E., Hamilton, B., Houghton, D.C., Langer, J.M., Peaker, A.R., Perovic, D., Poole, I., Ravel, N., Hemment, P., and Chan, C.W., Semicond. Sci. Technol. 8, 236 (1993).Google Scholar
6. Joelsson, K.B., Hultman, L., Ni, W.-X., and Hansson, G.V., unpublished.Google Scholar
7. Du, C.-X., Ni, W.-X., Joelsson, K.B., and Hansson, G.V., Appl. Phys. Lett. 71, 1023 (1997).Google Scholar
8. Ni, W.-X., Joelsson, K.B., Du, C.-X., Pozina, G., Buyanova, I.A., Chen, W.M., Hansson, G.V., Monemar, B., Cardenas, J. and Svensson, B.G., to be published in Thin Solid Films.Google Scholar
9. Coffa, S., Priolo, F., Franzo, G., Polman, A., Libertino, S., Saggio, M., and Camera, A., Phys. Res. B106, 386 (1995).Google Scholar
10. Przybylinska, H., Jantsch, W., Suprun-Belevitch, Y., Stepikhova, M., Palmetshofer, L., and Hendorfer, G., Kozanecki, A., Wilson, R.J., and Sealy, B.J., Phys. Rev. B 54, 2532 (1996).Google Scholar
11. Buyanova, I.A. Chen, W.M., Pozina, G., Ni, W.-X., Hansson, G.V., and Monemar, B., to be published in J. Vac. Sci. and Technol. B.Google Scholar
12. Xie, Y.-H., Fitzgerald, E.A., and Mii, Y.J., J. Appl. Phys. 70, 3223 (1990).Google Scholar