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MBE Growth and Optical Properties of ZnSeO

Published online by Cambridge University Press:  11 February 2011

Y. Nabetani ,
T. Mukawa ,
Y. Ito ,
T. Kato  and
T. Matsumoto
Y. Nabetani
Affiliation:
Department of Electrical Engineering, University of Yamanashi, Takeda 4–3–11, Kofu 400–8511, Japan
T. Mukawa
Affiliation:
Department of Electrical Engineering, University of Yamanashi, Takeda 4–3–11, Kofu 400–8511, Japan
Y. Ito
Affiliation:
Department of Electrical Engineering, University of Yamanashi, Takeda 4–3–11, Kofu 400–8511, Japan
T. Kato
Affiliation:
Department of Electrical Engineering, University of Yamanashi, Takeda 4–3–11, Kofu 400–8511, Japan
T. Matsumoto
Affiliation:
Department of Electrical Engineering, University of Yamanashi, Takeda 4–3–11, Kofu 400–8511, Japan
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Abstract

ZnSeO alloy was successfully grown by molecular beam epitaxy on GaAs substrate using RF plasma. The crystal structure of epitaxial ZnSeO alloy was zincblende. No phase separation was observed by in-situ reflection high energy electron diffraction and X-ray diffraction measurements. O composition was estimated by lattice constant assuming Vegard's law. Photoluminescence intensity was larger than that of ZnSe. The peak energy shifted toward lower energies by increasing O composition. The band gap energy determined by photoluminescence excitation decreased with increasing O composition. The bowing parameter was obtained as high as 8.2eV. This large band gap bowing widens controllable energy range of II-VI semiconductor.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 744: Symposium M – Progress in Semiconductors II–Electronic and Optoelectronic Applications , 2002 , M3.4
Copyright
Copyright © Materials Research Society 2003

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References

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