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MBE Growth Considerations for the Fabrication of 640×480 IR Focal Plane Arrays of SiGe Hip Detectors

Published online by Cambridge University Press:  15 February 2011

P. E. Hompson ,
M. Weeks ,
P. Tedrow  and
K. Hobart
P. E. Hompson
Affiliation:
Code 6812, Naval Research Laboratory, Washington, DC 20375, thompson@estd.nrl.navy.mil
M. Weeks
Affiliation:
Rome Laboratory, Hanscom AFB, MA
P. Tedrow
Affiliation:
PML, Lowell, MA
K. Hobart
Affiliation:
Code 6812, Naval Research Laboratory, Washington, DC 20375, thompson@estd.nrl.navy.mil
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Abstract

Encouraging results have been reported for discrete heterojunction internal photoemission (HIP) infrared (IR) detectors composed of heavily boron doped Si1−3Gex layers on Si. We desired to build on those results and fabricate 640×480 IR focal plane arrays on 100 mm Si substrates, suitable for commercial microelectronic processing. In this paper we discuss the growth issues for growing these structures by molecular beam epitaxy. Since the wafers had already undergone processing and some had PtSi contacts, the growth temperature was constrained to be no greater than 600 °C. Precise temperature control was obtained by calibrating an optical pyrometer with a thermocouple embedded in the substrate heater assembly, which was calibrated using the eutectic emperatures of Au/Si and Al/Si. The final step of the cleaning process was a 1% HF dip/ spin dry, which resulted in a H-terminated surface. The H was removed at 550 °C in vacuum prior to rowth. The growth of the B-doped SiGe layer was done at 350 °C to minimize segregation and diffusion of the Ge and B. Doping levels of 2×1020/cm3 were obtained with near 100% activation. Using Si0.35, doped with 2×1020 B/cm3, a cut-off wavelength of 11.1 μm and an emission coefficient of 19.8 %/eV were obtained for discrete detectors. Preliminary results from the detector arrays show full functionality in the spectral range of 6.1 to 12.8 μm.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 402: Symposium H – Silicide Thin Films-Fabrication, Properties and Applications , 1995 , 431
Copyright
Copyright © Materials Research Society 1996

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