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MBE Growth of IV-VI Nanowires on a Self-organized Template

Published online by Cambridge University Press:  01 February 2011

Lee Andrew Elizondo ,
Patrick McCann ,
Joel Keay  and
Matthew Johnson
Lee Andrew Elizondo
Affiliation:
Lee_A_Elizondo@raytheon.comleeelizondo@yahoo.com, Raytheon Vision Systems, Goleta, California, United States
Patrick McCann
Affiliation:
pmccann@ou.edu, University of Oklahoma, School of Electrical and Computer Engineering, Norman, Oklahoma, United States
Joel Keay
Affiliation:
keay@ou.edu, University of Oklahoma, Homer L. Dodge Department of Physics and Astronomy, Norman, Oklahoma, United States
Matthew Johnson
Affiliation:
Johnson@nhn.ou.edu, University of Oklahoma, Homer L. Dodge Department of Physics and Astronomy, Norman, Oklahoma, United States
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Abstract

We present the experimental results for the first known molecular beam epitaxy (MBE) growth of quasi-one-dimensional PbSe wires on technologically relevant silicon.In this work, we describe the growth and characterization of low-dimensional IV-VI semiconductors as they evolve from one-dimensional dot/dot-chains to one-dimensional structures on a self-organized template epitaxially grown on Si(110). In situ and ex situ characterization were performed at various stages throughout growth by reflection high energy electron diffraction, scanning electron microscopy, and non-contact atomic force microscopy. Initial growths resulted in some preferential alignment of the PbSe dot-chains parallel to the self-organized template in the [-110] direction. By reducing the substrate temperature and increasing the supplemental Se flux, the morphology of dot-chains extend into lengthened one-dimensional structures. This is an important milestone in the fabrication of PbSe quantum wires on technologically relevant silicon.

Keywords

molecular beam epitaxy (MBE)nanostructureself-assembly
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1258: Symposia P/Q/R – Low-Dimensional Functional Nanostructures-Fabrication, Characterization and Applications , 2010 , 1258-P04-56
Copyright
Copyright © Materials Research Society 2010

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