Hostname: page-component-6bf8c574d5-t27h7 Total loading time: 0 Render date: 2025-02-22T23:13:28.570Z Has data issue: false hasContentIssue false
  • English
  • Français

MBE Growth of Oxides for III–N MOSFETs

Published online by Cambridge University Press:  10 February 2011

B. Gila ,
K N. Lee ,
J Laroche ,
F Ren ,
S. M. Donovan ,
C. R. Abernathy  and
J. Han
B. Gila
Affiliation:
Department of Materials Science, Rhines Hall, University of Florida, Gainesville, FL 32611
K N. Lee
Affiliation:
Department of Materials Science, Rhines Hall, University of Florida, Gainesville, FL 32611
J Laroche
Affiliation:
Department of Chemical Engineering, University of Florida, Gainesville, FL 32611
F Ren
Affiliation:
Department of Chemical Engineering, University of Florida, Gainesville, FL 32611
S. M. Donovan
Affiliation:
Department of Materials Science, Rhines Hall, University of Florida, Gainesville, FL 32611
C. R. Abernathy
Affiliation:
Department of Materials Science, Rhines Hall, University of Florida, Gainesville, FL 32611
J. Han
Affiliation:
Sandia National Laboratory, Albuquerque, NM
Get access

Abstract

Reproducible fabrication of high performance metal oxide semiconductor field effect transistors (MOSFETs) from compound semiconductors will require both good interfacial electrical characteristics and good thermal stability. While dielectrics such as SiO2, AIN, and GdGaOx have demonstrated low to moderate interface state densities, questions remain about their thermal stability and reliability, particularly for use in high power or high temperature widebandgap devices. In this paper we will compare the utility of two potential gate dielectric materials: GdOx and GaOx. GdOx has been found to produce layers with excellent surface morphologies as evidenced by surface roughness of less than I nm. Stoichiometric films can be easily obtained over a range of deposition conditions, though deposition temperatures of 500°C appear to offer the optimum interfacial electrical quality. By contrast GaOx films are quite rough, polycrystalline and show poor thermal stability. Further they exhibit a range of stoichiometries depending upon deposition temperature, Ga flux and oxygen flux. This paper will describe the relationship between deposition conditions and film characteristics for both materials, and will present electrical characterization of capacitors fabricated from GdOx on Si.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 573: Symposium Z – Compound Semiconductor Surface Passivation and Novel Device.. , 1999 , 247
Copyright
Copyright © Materials Research Society 1999

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Asbeck, P. M., Yu, E. T., Lau, S. S., Sullivav, G. J., Van Hove, J. and Redwing, J. M., Electron. Lett. 33, p. 1230 (1997).Google Scholar
2. Binari, S. C., Kruppe, W., Dietrich, H. B., Kelner, G., Wickenden, A. E. and Freitas, J. A., Solid State Electron. 41, p.1549 (1997).Google Scholar
3. Shur, M. S., Mat. Res. Soc. Symp. Proc. 483, p. 15 (1998).Google Scholar
4. Burm, J., Chu, K., Schaff, W. J., Eastman, L. F., Khan, M. A., Chen, Q., Yang, J. W. and Shur, M. S., IEEE Electron. Dev. Lett. 18, p. 141 (1997).Google Scholar
5. Gaska, R., Chen, Q., Yang, J., Osinsky, A., Khan, M. A. and Shur, M. S., IEEE Electron. Dev. Lett. 18, p. 4 92 (1997).Google Scholar
6. Khan, M. A., Chen, Q., Sun, C. J., Shur, M. S. and Gelmark, B., Appl. Phys. Lett. 67, p.1429 (1995).Google Scholar
7. Wu, Y.-F., Keller, B. P., Fini, P., Keller, S., Jenkins, T. J., Kenias, L. T., DenBaars, S. P. and Mishra, U. K., IEEE Electron. Dev. Lett. 19, p. 50 (1998).Google Scholar
8. Wu, Y. F., Keller, B. P., Keller, S., Kapolneck, D., Kozodoy, P., DenBaars, S. P. and Mishra, U. K., Appl. Phys. Lett. 69, p.1438 (1996).Google Scholar
9. Sullivan, G. J., Chen, M. Y., Higgins, J. A., Yang, J. W., Chen, Q., Pierson, R. C. and McDermott, B. T., IEEE Electron. Dev. Lett. 19, p. 198 (1998).Google Scholar
10. Ping, A. T., Chen, Q., Yang, J. W., Khan, M. A. and Adesida, I., IEEE Electron. Dev. Lett. 19, p. 54 (1998).Google Scholar
11. Akatas, O., Fan, Z. F., Botcharev, A., Mohammad, S. N., Roth, M., Jenkins, T., Kehias, L. and Morkoc, H., IEEE Electron. Dev. Lett. 18, p.293 (1997).Google Scholar
12. Passlack, M., Hong, M., Mannaerts, J. P., Opila, R. L., Chu, S. N. G., Moriya, N., Ren, F. and Kwo, J., IEEE Trans. Electron. Dev. 44, p. 214 (1997).Google Scholar
13. Ren, F., Hong, M., Kuo, J. M., Hobson, W. S., Lothian, J. R., Tsai, H. S., Lin, J., Mannaerts, J. P., Kwo, J., Chu, S. N. G., Chen, Y. K. and Cho, A. Y., 1997 IEEE GaAs IC Symposium, Anaheim, CA Oct. 12–15, 1997.Google Scholar
14. Ren, F., Kuo, J. M., Hong, M., Hobson, W. S., Lothian, J. R., Lin, J., Tsui, H. S., Mannaerts, J. P., Kwo, J., Chu, S. N. G., Chen, Y. K. and Cho, A. Y., IEEE Electron. Dev. Lett. 19, p.309 (1998).Google Scholar
15. Ren, F., Hong, M., Chu, S. N. G., Marcus, M. A., Schurman, M. J., Baca, A., Pearton, S. J., Abernathy, C. R., Appl. Phys. Lett., 73, p. 3893 (1998)Google Scholar
16. Wolter, S. D., Luther, B. P., Waltenyer, D. L., Onneby, C., Mohney, S. E., Molnar, R. J., Appl. Phys. Lett. 70, p. 2156 (1997).Google Scholar
17. Wolter, S. D., Mohney, S. E., Venugopalan, H., Wickenden, A.E., Koleske, D. D., J. Electrochem. Soc. 145, p. 629 (1998)Google Scholar
18. Readinger, E. D., Wolter, S. D., Waltenyer, D. L., Delucca, J. M., Mohney, S. E., Prenitzer, B. I., Giannuzzi, L. A., Molnar, R. J., J. Electronic Mater. 28, p.257 (1999).Google Scholar
19. Passlack, M., Schubert, E. F., Hobson, W. S., Hong, M., Moriya, N., Chu, S. N. G., Konstaninidis, K., Mannaerts, J. P., Schnoes, M. L., Zydzik, G. J., J. Appl. Phys., 77, p. 686 (1995)Google Scholar
20. Hong, M., Passlack, M., Mannaerts, J. P. Kwo, J., Chu, S. N. G., Moriya, N., Hou, S. Y., Fratella, V. J., J. Vac. Sci. Tech., B14, p.2297 (1996)Google Scholar
21. Hong, M., Marcus, M. A., Kwo, J., Mannaerts, J. P., Sergent, A. M., Chou, L. J., Hsieh, K. C., Cheng, K. Y., J. Vac. Sci. Tech., B 16, p.1395, (1998)Google Scholar
22. Hong, M., Ren, F., Kuo, J. M., Hobso, W. S., Kwo, J., Mannaerts, J. P., Lothian, J. R., Chen, Y. K., J. Vac. Sci. Tech., B16, p. 1398 (1998)Google Scholar
23. Callegari, A., Hoh, P. D., Buchanan, D. A., Lacey, D., Appl. Phys. Lett. 54, p.332 (1989).Google Scholar