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Measurements of Enhanced Oxygen Diffusion in Silicon During Thermal Donor Formation: New Evidence for Possible Mechanisms

Published online by Cambridge University Press:  25 February 2011

A.R. Brown ,
R. Murray ,
R.C. Newman  and
J.H. Tucker
A.R. Brown
Affiliation:
Interdisciplinary Research Centre for Semiconductor Materials, The Blackett Laboratory, Imperial College of Science, Prince Consort Road, London, SW7 2BZ, U.K.
R. Murray
Affiliation:
Interdisciplinary Research Centre for Semiconductor Materials, The Blackett Laboratory, Imperial College of Science, Prince Consort Road, London, SW7 2BZ, U.K.
R.C. Newman
Affiliation:
Interdisciplinary Research Centre for Semiconductor Materials, The Blackett Laboratory, Imperial College of Science, Prince Consort Road, London, SW7 2BZ, U.K.
J.H. Tucker
Affiliation:
Interdisciplinary Research Centre for Semiconductor Materials, The Blackett Laboratory, Imperial College of Science, Prince Consort Road, London, SW7 2BZ, U.K.
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Abstract

Czochralski silicon has been heated in a H-plasma at temperatures in the range 300-450°C, and compared with furnace annealed material. Plasma treatments produce enhanced rates of oxygen diffusion jumps, loss of oxygen from solution and formation of thermal donor centres. The available evidence indicates that atomic hydrogen catalyses the enhancements via the oxygen diffusion rate. Donor concentrations greater than 1017cm-3 have been observed in samples heated in a plasma at 350°C. Doubts have been raised about dimer formation being the primary mechanism for oxygen loss in furnace anneals at 350°C, but invoking enhanced diffusion leads to a conflict with stress dichroism data.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 163: Symposium G – Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures , 1989 , 555
Copyright
Copyright © Materials Research Society 1990

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