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Measurements of SiH3 and SiH2 Radical Densities in RF Silane Plasmas Using Laser Spectroscopic Techniques

Published online by Cambridge University Press:  01 January 1993

T. Goto
T. Goto*
Affiliation:
Department of Electronics, Nagoya University, Nagoya 464,, Japan
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Abstract

In the RF (13.56 MHz) silane plasma, recently the SiH3 radical density was measured using infrared diode laser absorption spectroscopy, and the correlation between the SiH3 radical density and the growth rate of hydrogenated amorphous silicon thin film was investigated. The SiH2 radical density was also measured using modified laser induced fluorescence spectroscopy and intracavity laser absorption spectroscopy. Those measurement methods and main results are reviewed here.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 297: Symposium A – Amorphous Silicon Technology - 1993 , 1993 , 3
Copyright
Copyright © Materials Research Society 1993

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References

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