Hostname: page-component-78c5997874-lj6df Total loading time: 0 Render date: 2024-11-13T02:20:23.014Z Has data issue: false hasContentIssue false
  • English
  • Français

Mechanical Properties of Sputtered Silicon Oxynitride Films by Nanoindentation

Published online by Cambridge University Press:  01 February 2011

Yan Liu ,
I-Kuan Lin  and
Xin Zhang
Yan Liu
Affiliation:
yliu@bu.edu, Boston University, Department of Manufacturing Engineering, 15 Saint Mary's Street, Brookline, MA, 02446, United States, (617) 358-1913
I-Kuan Lin
Affiliation:
ikuan@bu.edu, Boston University, Department of Manufacturing Engineering, 15 St. Mary's Street, Brookline, MA, 02446, United States
Xin Zhang
Affiliation:
xinz@bu.edu, Boston University, Department of Manufacturing Engineering, 15 St. Mary's Street, Brookline, MA, 02446, United States
Get access

Abstract

Silicon oxynitride (SiON) films with different oxygen and nitrogen content were deposited by RF magnetron sputtering. Fourier-transform infrared (FT-IR) spectroscopy study revealed that co-sputterred SiON films were composed of one homogeneous phase of random bonding O-Si-N network. Time-dependent plastic deformation (creep) of SiON films were investigated by depth-sensing nanoindentation at room temperature. Results from nanoindentation creep indicated that plastic flow was relatively less homogenous with increasing nitrogen content in film composition. A deformation mechanism based on atomic bonding structure and shear transformation zone (STZ) plasticity theory was proposed to interpret creep behaviors of sputtered SiON films.

Keywords

stress/strain relationshipsputteringthin film
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1049: Symposium AA – Fundamentals of Nanoindentation and Nanotribology IV , 2007 , 1049-AA05-17
Copyright
Copyright © Materials Research Society 2008

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Habermehl, S., Glenzinski, A. K., Halliburton, W. M. and Sniegowski, J. J., Mater. Res. Soc. Symp. Proc. 605, 49 (2000).Google Scholar
[2] Oliver, W. C. and Pharr, G. M., J. Mater. Res. 19, 3 (2004).Google Scholar
[3] Philipp, H. R., J. Non-Cryst. Solids 8–10, 627 (1972).Google Scholar
[4] Lucovsky, G., Richard, P. D., Tsu, D. V., Lin, S. Y. and Markunas, R. J., J. Vac. Sci. Technol. A 4, 681 (1986).Google Scholar
[5] Tsu, D. V., Lucovsky, G. and Mantini, M. J., Phys. Rev. B 33, 7069 (1986).Google Scholar
[6] Li, H., Ngan, A. H. W. and J. Mater. Res. 19, 513 (2004).Google Scholar
[7] Argon, A. S., Acta. Metall. 27, 47 (1979).Google Scholar
[8] Langer, J. S., Phys. Rev. E 64, 0115041 (2001).Google Scholar