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Mechanical Testing of Bonded Silicon on Insulator Wafers.

Published online by Cambridge University Press:  22 February 2011

S. N. Farrepi ,
B. Roberds ,
M. C. Boettcher ,
M. S. Ismail ,
R. W. Bower ,
C. A. Desmond  and
C. E. Hunt
S. N. Farrepi
Affiliation:
Mech. Aero, and Materials Engr. Dept., University of California, Davis, CA.
B. Roberds
Affiliation:
Mech. Aero, and Materials Engr. Dept., University of California, Davis, CA.
M. C. Boettcher
Affiliation:
Mech. Aero, and Materials Engr. Dept., University of California, Davis, CA.
M. S. Ismail
Affiliation:
Elect, and Comp. Engr. Dept., University of California, Davis, CA.
R. W. Bower
Affiliation:
Elect, and Comp. Engr. Dept., University of California, Davis, CA.
C. A. Desmond
Affiliation:
Elect, and Comp. Engr. Dept., University of California, Davis, CA.
C. E. Hunt
Affiliation:
Elect, and Comp. Engr. Dept., University of California, Davis, CA.
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Abstract

A series of mechanical tests have been conducted on bonded silicon to silicon (native oxide present only) and oxide to oxide wafers at several times and temperatures. Tensile tests have been designed to evaluate the strength of the bond. Tensile tests have been conducted over the full range of bond strengths ranging from the weak van der Waals forces to the full silicon bonds.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 239: Symposium D – Thin Films: Stresses and Mechanical Properties III , 1991 , 287
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

[1] Stengl, R., Tran, T., and Gosele, U., Jpn. J. Appl. Phys., 28 (10)1735(1989).CrossRefGoogle Scholar
[2] Maszara, W. P., Goetz, G., Caviglia, A., and McKitterick, J.B., J. Appl. Phys., 64 (10)4943(1988).CrossRefGoogle Scholar
[3] Shimbo, M., Furukawa, K., Fukuda, K., and Tanzawa, K., J. Appl. Phys., 60 (8)2987(1986).Google Scholar
[4] Abe, Takao, Takei, Tokio, Uchiyama, Atsuo, Yoshizawa, Katsuo, and Nakazato, Yasuaki, Jpn. J. Appl. Phys., 29 (12)L2311(1990).Google Scholar