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The Mechanism for Defect Generation Studied by Photodegradation of A-Si:H Solar Cells Under Electrical Bias

Published online by Cambridge University Press:  21 February 2011

Liyou Yang ,
L. Chen ,
J.Y. Hou  and
Y.M. Li
Liyou Yang
Affiliation:
Solarex Corp., Thin Film Division, 826 Newtown-Yardley Road, Newtown, PA 18940
L. Chen
Affiliation:
Solarex Corp., Thin Film Division, 826 Newtown-Yardley Road, Newtown, PA 18940
J.Y. Hou
Affiliation:
Solarex Corp., Thin Film Division, 826 Newtown-Yardley Road, Newtown, PA 18940
Y.M. Li
Affiliation:
Solarex Corp., Thin Film Division, 826 Newtown-Yardley Road, Newtown, PA 18940
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Abstract

The light induced degradation of a-Si:H p-i-n solar cells under electrical bias has been systematically studied. By comparing the results with the light intensity dependence of cell degradation under open circuit condition, we show that the only recombination mechanism, which can be consistent with the experimental data in both cases, is based on the bimolecular recombination between a free hole and a trapped electron at the “weak” bond site. Other possibilities for defect creation are also pointed out.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 258: Symposium A – Amorphous Silicon Technology – 1992 , 1992 , 365
Copyright
Copyright © Materials Research Society 1992

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References

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