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Memory Switching in Ion Bombarded Amorphous Silicon Carbide Thin Film Devices

Published online by Cambridge University Press:  11 February 2011

R. G. Gateru ,
J. M. Shannon  and
S. R. P. Silva
R. G. Gateru*
Affiliation:
Advanced Technology Institute, School of Electronics and Physical Sciences, University of Surrey, Guildford, Surrey, GU2 7XH, United Kingdom
J. M. Shannon
Affiliation:
Advanced Technology Institute, School of Electronics and Physical Sciences, University of Surrey, Guildford, Surrey, GU2 7XH, United Kingdom
S. R. P. Silva
Affiliation:
Advanced Technology Institute, School of Electronics and Physical Sciences, University of Surrey, Guildford, Surrey, GU2 7XH, United Kingdom
*
1r.gateru@surrey.ac.uk or rgateru@hotmail.com Tel: +44 (0) 1483 686088, Fax: +44 (0) 1483 689404
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Abstract

Metal-semiconductor-metal (MSM) memory devices have been made in hydrogenated amorphous silicon carbide (a-SiCx:H). Switching in silicon-rich amorphous silicon alloys is believed to be related to the concentration of defects in the semiconductor material. We have used ion bombardment to introduce a controlled number of damage centres into amorphous silicon carbide. Both analog and digital switching behaviours are reported.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 742: Symposium K – Silicon Carbide-Materials, Processing, and Devices , 2002 , K2.3
Copyright
Copyright © Materials Research Society 2003

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References

REFERENCES

1. Hovel, H.J., Appl. Phys. Lett., 17, 141–143, (1970).Google Scholar
2. Gibbons, J., Beadle, W.E., Solid State Electr., 7, 785–797, (1964).Google Scholar
3. Feldman, C., Moorjani, K., Thin Solid Films, 5, R1–R4, (1970).Google Scholar
4. Gabriel, M.C., Adler, D., J. Non-Cryst. Solids, 48, 297–305, (1982).Google Scholar
5. Shannon, J.M., Gateru, R.G. and Gerstner, E.G., Electronics Letters, 38, 249, (2002).Google Scholar
6. Shannon, J.M., Lau, S.P., Annis, A.D. and Sealy, B.J., Solid-State Electr., 42, 91–99 (1998)Google Scholar
7. Shannon, J.M., Deane, S.C., McGravey, B. and Sandoe, J.N., Appl. Phys. Lett., 65, (1994).Google Scholar
8. Lau, S.P., Shannon, J.M., Sealy, B.J. and Marshall, J.M., Mat. Res. Soc. Symp Proc., 507, 655, (1998).Google Scholar
9. van Swaaij, R.A.C.M.M., Annis, A.D. and Sealy, B.J., J. Appl. Phys., 82, 4800–4804, (1997).Google Scholar