Hostname: page-component-cd9895bd7-dzt6s Total loading time: 0 Render date: 2024-12-29T14:20:45.517Z Has data issue: false hasContentIssue false
  • English
  • Français

Memory window in ferroelectric PVDF copolymer gate integrated MOSFET devices for nondestructive readout memory application

Published online by Cambridge University Press:  01 February 2011

Sang-Hyun Lim ,
Alok C Rastogi  and
Seshu B Desu
Sang-Hyun Lim
Affiliation:
sanghyun@engin.umass.edu, University of Massachusetts, Amherst, Electrical and Computer Engineering, 201 Marcus Hall,, Dept. of Electrical and Computer Engineering, Amherst, MA, 01003, United States
Alok C Rastogi
Affiliation:
rastogi@ecs.umass.edu, University of Massachusetts, Electrical and Computer Engineering, Amherst, MA, 01003, United States
Seshu B Desu
Affiliation:
sdesu@ecs.umass.edu, University of Massachusetts, Electrical and Computer Engineering, Amherst, MA, 01003, United States
Get access

Abstract

Metal-Ferroelectric-Oxide-Si (MFEOS) field effect transistor (FET) with ferroelectric polyvinylidene fluoride trifluoroethylene copolymer (PVDF-TrFE) gate for nonvolatile memory application is demonstrated. Memory window ascribed to ferroelectric polarization switching has been quantified by shift of threshold voltage are ~ 4-5V. Non saturating IDS is due to free ionic polarization field. IDS-VDS characteristics of functional FET are realized after AC poling.

Keywords

ferroelectricpolymermemory
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 997: Symposium I – Materials and Processes for Nonvolatile Memories II , 2007 , 0997-I03-02
Copyright
Copyright © Materials Research Society 2007

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Chen, S. Y., Sun, C. L., Chen, S.B., Chin, A., Appl. Phys. Lett, 80, 3164 (2002)Google Scholar
2. Suzuki, T., Tokumitsu, E., Jpn. J. Appl. Phys. (Part1) 41, 6886 (2002)Google Scholar
3. Noda, M., Kodama, K., Ikeuchi, I., Takahashi, M. and Okuyama, M., Jpn. J. Appl. Phys., 42, 2055 (2003)Google Scholar
4. Li, T., Hsu, S.T., Ulrich, B.D., Evans, D. R., Appl. Phys. Letts, 86, 123513 (2005)Google Scholar
5. Li, T., Hsu, S.T., Ulrich, B.D., Stecker, L., Evans, D.R., Lee, J., IEEE Electron Device Lett., 23, 339 (2002)Google Scholar
6. Kakai, S., Ilangovan, R., Takahasi, M., Jpn. J. Appl. Phys. 43, 7876 (2004)Google Scholar
7. Ishiwara, H., Mater. Res. Soc. Symp. Proc. 748, 297 (2003)Google Scholar
8. Hirooka, G., Noda, M., Okuyama, M., Jpn. J. Appl. Phys. 43, 2190 (2004)Google Scholar
9. Lim, S. H., Rastogi, A. C. and Desu, S.B., J. Appl. Phys., 96, 5673 (2004)Google Scholar