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Meso-Epitaxy: Epitaxial Growth Of Silicon Over Buried Single Crystal Cosi2 Layers.

Published online by Cambridge University Press:  28 February 2011

J. W. Osenbach ,
A. E. White ,
K. T. Short ,
H. C. Praefcke  and
V. C. Kannon
J. W. Osenbach
Affiliation:
AT&T Bell Laboratories, 2525 North 12th Street, Reading, Pennsylvania 19612-3566
A. E. White
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07960-4499
K. T. Short
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07960-4499
H. C. Praefcke
Affiliation:
AT&T Bell Laboratories, 2525 North 12th Street, Reading, Pennsylvania 19612-3566
V. C. Kannon
Affiliation:
AT&T Bell Laboratories, 555 Union Boulevard, Allentown, Pennsylvania 18103
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Abstract

Buried single-crystal layers of CoSi2 were formed in 150Ω-cm, p-type (100) silicon by high dose implantation of Co followed by furnace annealing. Subsequently, epitaxial silicon layers were grown over these buried CoSi2 layers using SiCl2H2 /HCI/H2. The RBS channel yield of the buried CoSi2 and the epitaxial Si layer is less than 4% indicating good crystallinity of the layer. The defect density in the epitaxial silicon layer as revealed by a dilute Schimmel etch, was in excess of 108 dislocations/cm2 which appear to originate from <111> CoSi2 facets. However, both the substrate/CoSi2 and the CoSi2/epi interface are single crystal as revealed by lattice fringes in TEM. To our knowledge, this is the first report of such a structure.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 198: Symposium V – Epitaxial Heterostructures , 1990 , 567
Copyright
Copyright © Materials Research Society 1990

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References

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