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Metal / Silicon Multilayers Produced by Low-Temperature MOCVD

Published online by Cambridge University Press:  10 February 2011

F. Hamelmann ,
G. Haindl ,
A. Klipp ,
E. Majkova ,
U. Kleineberg ,
P. Jutzi  and
U. Heinzmann
F. Hamelmann
Affiliation:
Department of Physics, University Bielefeld, 33615 Bielefeld, Germany, hamelmann@physik.uni-bielefeld.de
G. Haindl
Affiliation:
Department of Physics, University Bielefeld, 33615 Bielefeld, Germany, hamelmann@physik.uni-bielefeld.de
A. Klipp
Affiliation:
Department of Chemistry, University Bielefeld, 33615 Bielefeld, Germany
E. Majkova
Affiliation:
Department of Physics, University Bielefeld, 33615 Bielefeld, Germany, hamelmann@physik.uni-bielefeld.de Permanent address: Institute of Physics SAS, 84228 Bratislava, Slovakia
U. Kleineberg
Affiliation:
Department of Physics, University Bielefeld, 33615 Bielefeld, Germany, hamelmann@physik.uni-bielefeld.de
P. Jutzi
Affiliation:
Department of Chemistry, University Bielefeld, 33615 Bielefeld, Germany
U. Heinzmann
Affiliation:
Department of Physics, University Bielefeld, 33615 Bielefeld, Germany, hamelmann@physik.uni-bielefeld.de
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Abstract

W/Si and Mo/Si multilayers with 20 periods (doublelayer spacing d = 24nm) were deposited on silicon substrates using (remote-) plasma-enhanced MOCVD. The substrate temperature was below 200°C, which is necessary to avoid interdiffusion of the layers. The layer thickness and growth was controlled by an in situ soft x-ray reflectivity measurement. The characterisation of the multilayers showed an excellent growth of the silicon layers, while the metal layers are rough with embedded crystallites.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 555: Symposium OO – Properties and Processing of Vapor-Deposited Coatings , 1998 , 19
Copyright
Copyright © Materials Research Society 1999

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