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Metallorganic Chemical Vapor Deposition of Ir Films With Iridium Acetylacetonate and Carbonyl Precursors

Published online by Cambridge University Press:  10 February 2011

Y.-M. Sun ,
J. Endle ,
K. Smith ,
J. G. Ekerdt ,
R. L. Hance ,
P. Alluri  and
J. M. White
Y.-M. Sun
Affiliation:
Science and Technology Center for Growth, Synthesis and Analysis of Electronic Materials, The University of Texas at Austin, Austin, TX 78712
J. Endle
Affiliation:
Science and Technology Center for Growth, Synthesis and Analysis of Electronic Materials, The University of Texas at Austin, Austin, TX 78712
K. Smith
Affiliation:
Science and Technology Center for Growth, Synthesis and Analysis of Electronic Materials, The University of Texas at Austin, Austin, TX 78712
J. G. Ekerdt
Affiliation:
Science and Technology Center for Growth, Synthesis and Analysis of Electronic Materials, The University of Texas at Austin, Austin, TX 78712
R. L. Hance
Affiliation:
Materials Research & Strategic Technologies Motorola, Austin, TX 78721
P. Alluri
Affiliation:
Materials Research & Strategic Technologies Motorola, Austin, TX 78721
J. M. White
Affiliation:
Science and Technology Center for Growth, Synthesis and Analysis of Electronic Materials, The University of Texas at Austin, Austin, TX 78712
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Abstract

Iridium acetylacetonate, dicarbonylacetylacetonato iridium, and tetrakisiridium dodecacarbonyl (iridium carbonyl) have been evaluated for metallorganic chemical vapor deposition (CVD) of pure iridium films. Temperature programmed mass spectroscopy reveals that iridium tris-acetylacetonate and dicarbonylacetylactonato iridium have high thermal stability and sublime at 200 and 100 °C in vacuum, respectively. Iridium carbonyl decomposes upon sublimation at temperatures above 120 °C. Pure CVD Ir films were obtained using iridium carbonyl; however, carbon is incorporated into the iridium films with the iridium trisacetylacetonate and dicarbonylacetylactonato iridium precursors unless a reactive gas, such as oxygen is co-dosed. Co-dosed oxygen also increases the film deposition rate and significantly decreases the film growth temperatures. Particles were found on the films grown with iridium carbonyl between 280 to 400 °C, indicating that gas phase nucleation occurred during deposition.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 541: Symposium O – Ferroelectric Thin Films VII , 1998 , 101
Copyright
Copyright © Materials Research Society 1999

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References

REFERENCES

1. Kotecki, D.E., Semiconductor International, Nov. 1996, p. 109.Google Scholar
2. Shimizu, M., Fujisawa, H., Hyodo, S., Nakashima, S., Niu, H., Okino, H., Shiosaki, T., Mater. Res. Soc. Symp. Proc. 493, p. 159, (1998).Google Scholar
3. Cho, H.-J., Horii, H., Hwang, C. S., Kim, J.-W., Kang, C. S., Lee, B. T., Lee, S. I., Koh, Y.B., and Lee, M. Y., Jpn. J. Appl. Phys., Part 1, 36, p.1722, (1997).Google Scholar
4. Katori, K., Nagel, N., Watannabe, K., Tanaka, M., Yamoto, H. and Yagi, H., Integr. Ferroelectr. 17, p. 443, (1997).Google Scholar
5. Gelfond, N.V., Igumenov, I.K., Boromin, A.I., Bukhtiyarov, V.I., Smirnov, M.Yu., Prosvirin, I.P. and Kwon, R.I., Surface Science 275, p. 323 (1992).Google Scholar
6. Sun, Y.-M., Endle, J. P., Smith, K., Whaley, S., Mahaffy, R., Ekerdt, J. G. and White, J. M., and Hance, R. L., to be published in “Thin Solid Film”.Google Scholar
7. Taylor, J. L., Ibbotson, D.E. and Weinberg, W.H., Surface Sci. 79, p. 349 (1979).Google Scholar
8. Sun, Y.-M., Yan, X.-M., Endle, J., Perish, P., Mettlach, N., Ekerdt, J. G. and White, J. M., in preparation.Google Scholar
9. Sun, Y.-M., Lozano, J., Endle, J., J. Ekerdt and White, J. M., and Hance, R. L., to be published in proceedings of Electrochemical Society conference, 1998, Boston.Google Scholar