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Metastability in SiGe/Si Strained-Layer Structures
Published online by Cambridge University Press: 28 February 2011
Abstract
The physics governing growth and stability properties in SiGe/Si strainedlayer structures is reviewed. The role of metastability in crystal growth is outlined. Experimental data on stability limits and rates of strain relaxation are examined. We conclude that essentially all observations on relaxation of semiconductor strained-layer structures can be explained by standard models of plastic deformation adapted to the special conditions controlling dislocation dynamics in these structures.
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- Copyright © Materials Research Society 1988
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