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Metastable Defects in a-SiOx:H and a-SiCx:H

Published online by Cambridge University Press:  21 February 2011

X.-M. Deng ,
A. Hamed ,
H. Fritzsche  and
M. Q. Tran
X.-M. Deng
Affiliation:
James Franck Institute, The University of Chicago, 5640 Ellis Ave., Chicago, IL 60637, U.S.A.
A. Hamed
Affiliation:
James Franck Institute, The University of Chicago, 5640 Ellis Ave., Chicago, IL 60637, U.S.A.
H. Fritzsche
Affiliation:
James Franck Institute, The University of Chicago, 5640 Ellis Ave., Chicago, IL 60637, U.S.A.
M. Q. Tran
Affiliation:
James Franck Institute, The University of Chicago, 5640 Ellis Ave., Chicago, IL 60637, U.S.A.
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Abstract

Metastable defects are created in hydrogenated amorphous silicon alloys presumably by the same mechanism as in a-Si:H. We find metastable defects created in a-SiCx:H and a-SiOx:H by hopping injection of photocarriers from adjacent a-Si:H layers. In a-SiCx:H the defects can be created only below T=150K, they anneal at TE=400K. In a-SiOx:H they are created at or below T=300K, they anneal at TE=480K. The anneal temperature is nearly independent of the creation temperature. The defects are detected by their charge exchange with adjacent a-Si:H layers whose conductance is thereby changed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 219: Symposium A – Amorphous Silicon Technology - 1991 , 1991 , 147
Copyright
Copyright © Materials Research Society 1991

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References

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