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A Method to Simulate the Interface-Diffusion in Solid-State Bonding-Processes Considering the Elastic Deformation

Published online by Cambridge University Press:  21 March 2011

Takehiko Ito ,
Shigeki Saito ,
Kunio Takahashi  and
Tadao Onzawa
Takehiko Ito
Affiliation:
Department of International Development Engineering, Faculty of Engineering, Tokyo Institute of Technology, 452, 1st Ishikawadai bldg., 2-12-1, O-okayama, Meguro-ku, Tokyo, Japan 152-8552
Shigeki Saito
Affiliation:
Department of International Development Engineering, Faculty of Engineering, Tokyo Institute of Technology, 452, 1st Ishikawadai bldg., 2-12-1, O-okayama, Meguro-ku, Tokyo, Japan 152-8552
Kunio Takahashi
Affiliation:
Department of International Development Engineering, Faculty of Engineering, Tokyo Institute of Technology, 452, 1st Ishikawadai bldg., 2-12-1, O-okayama, Meguro-ku, Tokyo, Japan 152-8552
Tadao Onzawa
Affiliation:
Department of International Development Engineering, Faculty of Engineering, Tokyo Institute of Technology, 452, 1st Ishikawadai bldg., 2-12-1, O-okayama, Meguro-ku, Tokyo, Japan 152-8552
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Abstract

We propose a new method to simulate the interface diffusion in the solid-state bonding-process. This method is more significant under the condition of low pressure and low temperature. It is available for the bonding of two bodies which consist of the atoms of the same kind and have slight surface roughness. In a conventional method, the elastic deformation during the bonding process is considered. The interface diffusion is enhanced and the bonding time decreases when the external pressure changes at appropriate frequency. In order to clarify the enhancement effect of changing the pressure, we examine three cases, i.e., the 1st pressure type is constant pressure, the 2nd type is zero pressure, and the 3rd type is the on-off pressure. Our results suggest the on-off pressure decreases the required time for the perfect bonding if we choose on appropriate frequency.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 653: Symposium Z – Multiscale Modeling of Materials-2000 , 2000 , Z10.8.1
Copyright
Copyright © Materials Research Society 2001

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References

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