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MeV Si Ions Bombardment Effects on the Properties of Nano-Layers of SiO2/SiO2+Ag

Published online by Cambridge University Press:  01 February 2011

Sadik Guner ,
Satilmis Budak ,
Claudiu I Muntele ,
Cydale C Smith  and
Daryush Ila
Sadik Guner
Affiliation:
sguner@cim.aamu.edu, Alabama A&M University, Center for Irradiation of Materials, Physics, 4900 Meridian street, Normal, AL, 35762, United States, +1 256 372 8413, +1 256 372 5868
Satilmis Budak
Affiliation:
sbudak@cim.aamu.edu, Alabama A&M University, Electrical Engineering, 4900 Meridian Street, Normal, AL, 35762, United States
Claudiu I Muntele
Affiliation:
claudiu@cim.aamu.edu, Alabama A&M University, Center for Irradiation of Materials, Physics, 4900 Meridian street, Normal, AL, 35762, United States
Cydale C Smith
Affiliation:
cmems@hotmail.com, Alabama A&M University, Department of Physics, 4900 Meridian Street, Normal, AL, 35762, United States
Daryush Ila
Affiliation:
ila@cim.aamu.edu, Alabama A&M University, Center for Irradiation of Materials, Physics, 4900 Meridian street, Normal, AL, 35762, United States
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Abstract

We have grown 100 periodic SiO2/SiO2+Ag multi-nano-layered systems where the SiO2+Ag layers were 7.26 nm and SiO2 buffer layer were 4 nm, total thickness is 563 nm. Using interferometer as well as in-situ thickness monitoring, we measured the thickness of the layers; using Rutherford Backscattering Spectrometry (RBS) measured the concentration and distribution of Ag in SiO2. The electrical conductivity, thermal conductivity and the Seebeck coefficient of the layered structure were measured at room temperature before and after bombardment by 5 MeV Si ions. The energy of the Si ions were chosen such that the ions are stopped in the silicon substrate and only electronic energy due to ionization is deposited in the layered structure. The electrical conductivity measured using Van der Pauw method. Thermal conductivity of the thin films was measured using an in-house built 3ω thermal conductivity measurement system. Using the measured Seebeck coefficient, thermal conductivity and electrical conductivity we calculated the figure of merit (ZT). We will report our findings of change in the figure of merit as a function of the bombardment fluence.

Keywords

ion-beam assisted depositionthermoelectricityRutherford backscattering (RBS)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1074: Symposium I – Synthesis and Metrology of Nanoscale Oxides and Thin Films , 2008 , 1074-I03-25
Copyright
Copyright © Materials Research Society 2008

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References

REFERENCES

1. Slack, G. in CRC Handbook of Thermoelectrics (Ed: Rowe, D.M.), CRC Press (1995) pp. 407–440.Google Scholar
2. Budak, S. Guner, S. Minamisawa, R.A. Muntele, C. Ila, D. Nucl. Instr. and Meth. in Phys. Res. B, doi: 10.1016/j.nimb.2007.12.001 (2007).Google Scholar
3. Budak, S. Muntele, C. Zheng, B. and Ila, D. Nucl. Instr. and Meth. in Phys. Res. B, 261, 1–2, 1167 (2007).Google Scholar
4. Güner, S., Budak, S. Minamisawa, R. A. Muntele, C. Ila, D. Nucl. Instr. and Meth. in Phys. Res. B, Vol. 266, 1261–1264 (2008).Google Scholar
5. Huang, B. C. -K., Lim, J. R. Herman, J. Ryan, M. A. Fleural, J. -P., Myung, N. V. Electrochemical Acta 50, 4371(2005).Google Scholar
6. Tritt, T.M. ed., Recent Trends in Thermoelectrics, in Semiconductors and Semimetals, 71, (2001).Google Scholar
7. Xiao, Z. Zimmerman, R.L. Holland, L.R. Zheng, B. Muntele, C. I. Ila, D., Nuc. Instr. and Meth. B 242, 201–204 (2006).Google Scholar
8. Holland, L. R. Simith, R. C. J. Apl. Phys. 37, 4528(1966).Google Scholar
9. Cahill, D. G. Katiyar, M. Abelson, J. R. Phys. Rev.B 50, 6077 (1994).Google Scholar
10. Tasciuc, T. B. Kumar, A.R. Chen, G., Rev. Sci. Instrum. 72, 2139 (2001).Google Scholar
11. Lu, L. Yi, W., Zhang, D. L. Rev. Sci. Instrum. 72, 2996 (2001).Google Scholar
12. Ziegler, J. F. Biersack, J. P. Littmark, U., The Stopping Range of Ions in solids, Pergamon Press, Newyork, 1985.Google Scholar
13. Chu, W. K. Mayer, J. W. Nicolet, M. -A., Backscattering Spectrometry, Academic Press, New York, 1978.Google Scholar
14. Smith, C. C. Budak, S. Guner, S. Muntele, C. Minamisawa, R. A. Zimmerman, R. L. and Ila, D. 2007 MRS Spring Meeting, April 9-13 2007, Moscone West&;San Francisco Marriott, Sanfrancisco, CA USA (GG7.21), pp. 201–205.Google Scholar
15. Doolittle, L. R. Thompson, M. O. RUMP, Computer Graphics Service, 2002.Google Scholar