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Microcrystallites in Oxidized Porous Silicon

Published online by Cambridge University Press:  28 February 2011

V. Lehmann ,
H. Cerva ,
B. Jobst ,
V. Petrova-Koch ,
A. Kux  and
Andt. Muschik
V. Lehmann
Affiliation:
Siemens, Dept. ZFE BT, 8000 Munich 83, Otto-Hahn-Ring 6, Germany
H. Cerva
Affiliation:
Siemens, Dept. ZFE BT, 8000 Munich 83, Otto-Hahn-Ring 6, Germany
B. Jobst
Affiliation:
Siemens, Dept. ZFE BT, 8000 Munich 83, Otto-Hahn-Ring 6, Germany
V. Petrova-Koch
Affiliation:
Tech. Univ. Munich, 8046 Garching, Germany
A. Kux
Affiliation:
Tech. Univ. Munich, 8046 Garching, Germany
Andt. Muschik
Affiliation:
Tech. Univ. Munich, 8046 Garching, Germany
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Abstract

Rapid thermal oxidation of porous silicon leads to desorbtion of hydrogen from the inner surface and formation of a thin oxide layer. Despite this dramatic change in the chemical composition oxidized microporous silicon (miPS) shows photoluminescence (PL) in the visible region. This is contradictory to the idea that the observed PL originates from chemical compounds like siloxene or polysilane, which would require a certain stoichiometry. If silicon microcrystallites are still present in the oxidized miPS, the observed luminescence can be explained in terms of a quantum confinement effect. It is the purpose of this work to prove the existence of microcrystallites in oxidized miPS using electron microscopy and X-ray diffraction.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 283: Symposium F – Microcrystalline Semiconductors–Materials Science and Devices , 1992 , 247
Copyright
Copyright © Materials Research Society 1993

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References

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