Hostname: page-component-78c5997874-4rdpn Total loading time: 0 Render date: 2024-11-10T17:32:13.780Z Has data issue: false hasContentIssue false

Microphotoluminescence Studies on Single GaN Nanocolumns

Published online by Cambridge University Press:  01 February 2011

Kathrin Sebald
Affiliation:
ksebald@ifp.uni-bremen.de, Institute of Solid State Physics, P.O. Box 330440, Bremen, Bremen, 28334, Germany
J. Gutowski
Affiliation:
gutowski@ifp.uni-bremen.de
N. Thillosen
Affiliation:
n.thillosen@fz-juelich.de
S. Montanari
Affiliation:
s.montanari@fz-juelich.de
R. Meijers
Affiliation:
r.meijers@fz-juelich.de
R. Calarco
Affiliation:
r.calarco@fz-juelich.de
N. Kaluza
Affiliation:
n.nastase@fz-juelich.de
H. Hardtdegen
Affiliation:
h.hardtdegen@fz-juelich.de
H. Lüth
Affiliation:
h.lueth@fz-juelich.de
Get access

Abstract

We present comparative micro-photoluminescence measurements on ensembles and isolated single GaN nanocolumns. The samples were prepared in a top-down approach by etching compact GaN layers grown on Si(111) and sapphire (0001) substrates. The comparison of the spectral energy change of the donor-bound exciton emission of GaN volume material and nanocolumns prepared on different substrates as well as from nanocolumns detached from the substrate gives an insight into the strain induced by the substrate. Experimental evidence for the relaxation effects were found. A common D°X spectral position at 3.473 eV was found for all detached single GaN nanocolumns independent of the substrate used, as expected for a relaxed system. Furthermore the optical properties of structural-defect related emission peaks were investigated for single nanocolumns.

Type
Research Article
Copyright
Copyright © Materials Research Society 2006

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Morales, A. M. and Lieber, C. M., Science 279, 208 (1998).CrossRefGoogle Scholar
[2] Huang, Y., Duan, X., Cui, Y., and Lieber, C. M., Nano Lett. 2, 101 (2002).CrossRefGoogle Scholar
[3] Chen, C. C., Yeh, C. C., Chen, C. H., Yu, M. Y., Liu, H. L., Wu, J. J., Chen, K. H., Chen, L. C., Peng, J. Y., and Chen, Y. F., J. Am. Chem. Soc. 123, 2791 (2001).CrossRefGoogle Scholar
[4] Tu, L. W., Hsiao, C. L., Chi, T. W., Lo, I., and Hsieh, K. Y., Appl. Phys. Lett. 82, 1601 (2003).CrossRefGoogle Scholar
[5] He, M., Zhou, P., Mohammad, S. N., Harris, G. L., Halpern, J. B., Jacobs, R., Sarney, W. L., and Salamanca-Riba, L., J. Cryst. Growth 231, 357 (2001).CrossRefGoogle Scholar
[6] Han, W., Fan, S., Li, Q., and Hu, Y., Science 277, 1287 (1997).CrossRefGoogle Scholar
[7] Birkhahn, R., Hudgins, R., Lee, D., Steckl, A. J., Molnar, R. J., Saleh, A., and Zavada, J. M., J. Vac. Sci. Technol. B 17, 1195 (1999).CrossRefGoogle Scholar
[8] Huang, M. H., Mao, S., Feick, H., Yan, H., Wu, Y., Kind, H., Weber, E., Russo, R., and Yang, P., Science 292, 1897 /2001).CrossRefGoogle Scholar
[9] Dhara, S., Datta, A., Wu, C. T., Lan, Z. H., Chen, K. H., and Wang, Y. L., Appl. Phys. Lett. 84, 3486 (2004).CrossRefGoogle Scholar
[10] Johnson, J. C., Choi, Heon-Jin, Knutsen, K. P., Schaller, R. D., Yang, P., Saykally, R. J., Nature Materials 1, 106 (2002).CrossRefGoogle Scholar
[11] Qian, F., Li, Y., Gradecak, S., Wang, D., Barrelet, C. J., Lieber, C. M., Nano Lett. 4, 1975 (2004).CrossRefGoogle Scholar
[12] Thillosen, N., Montanari, S., Meijers, R., Calarco, R., Kaluza, N., Hardtdegen, H., Lüth, H., Sebald, K., Gutowski, J., submitted to Nano Letters.Google Scholar
[13] Monemar, B., Phys. Rev. B 10, 676 (1974).CrossRefGoogle Scholar
[15] Kornitzer, K., Ebner, T., Thonke, K., Sauer, R., Kirchner, C., Kamp, M., Schwegler, V., Leszczynski, M., Grzegory, I., and Porowski, S., Phys. Rev. B 60, 1471 (1999).CrossRefGoogle Scholar
[16] Volm, D., Oettinger, K., Streibl, T., Kovalev, D., Ben-Chorin, M., Diener, J., Meyer, B., Majewski, J., Eckey, L., Hoffmann, A., et al. , Phys. Rev. B 53, 16543 (1996).CrossRefGoogle Scholar
[17] Mayer, M., Pelzmann, A., Kamp, M., Ebeling, K., Teisseyre, H., Nowak, G., Leszczynski, M., Grzegory, I., Porowski, S., and Karczewski, G., Jpn. J. Appl. Phys. Part 2 36, L1634 (1997).CrossRefGoogle Scholar
[18] Dingle, R., Sell, D., Stokowski, S., and Ilegems, M., Phys. Rev. B 4, 1211 (1971).CrossRefGoogle Scholar
[19] Reshchikov, M. A., Morkoç, H., J. Appl. Phys. 97, 061301 (2005) and Ref. therein.Google Scholar
[20] Celleja, E., Sánchez-García, M. A., Sánches, F. J., Calle, F., Naranjo, F. B., and Muňoz, E. Phys. Rev. B 62, 16826 (2000).CrossRefGoogle Scholar