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Microprobe Raman Analysis of Picosecond Laser Annealing of Implanted Silicon

Published online by Cambridge University Press:  15 February 2011

J. Sapriel ,
Y.I. Nissim  and
J.L. Oudar
J. Sapriel
Affiliation:
Centre National d'Etudes des Télécommunications*, 196 rue de Paris 92220 BAGNEUX - (FRANCE)
Y.I. Nissim
Affiliation:
Centre National d'Etudes des Télécommunications*, 196 rue de Paris 92220 BAGNEUX - (FRANCE)
J.L. Oudar
Affiliation:
Centre National d'Etudes des Télécommunications*, 196 rue de Paris 92220 BAGNEUX - (FRANCE)
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Abstract

Picosecond laser annealing has been performed on implantationamorphised silicon. A multiannular (up to five rings) recrystallization pattern has been generated by a single~30 psec pulse at 1.06 μM and 0.53 μm wavelength and energy density just below the damage threshold. The different patterns have been investigated by scanning the surface with a Raman microprobe with a 1pm spacial resolution. Information are thus given on the different phases (amorphous or crystalline) and on lateral as well as in depth dimensions of the different rings.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 13 , 1982 , 235
Copyright
Copyright © Materials Research Society 1983

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Footnotes

*

Laboratoire associé au CNRS (LA250)

References

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