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Microraman Characterization Of Microdefects In Bulk Sic

Published online by Cambridge University Press:  10 February 2011

E. Martín ,
M. Chafai  and
J. Jiménez
E. Martín
Affiliation:
Fisica de la Materia Condensada, E. T. S. de Ingenieros Industriales, 47011 Valladolid, Spain.
M. Chafai
Affiliation:
LETI, Departement de Physique, Faculté des Sciences, Mekness 50003, Morocco.
J. Jiménez
Affiliation:
Fisica de la Materia Condensada, E. T. S. de Ingenieros Industriales, 47011 Valladolid, Spain.
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Abstract

MicroRaman spectroscopy is used for characterizing defects in large SiC crystals with micrometer spatial resolution. The ability to identify microscopic inclusions of polytypes different than the crystal matrix is demonstrated; silicon and carbon inclusions and disorder effects are found in micropipes. A study of the Longitudinal Optic Phonon Plasmon Coupled (LOPC) Raman modes allowed to obtain local fluctuations of the net donor concentration, ND-NA, and the electron mobility around defects, which allowed impurity gettering effects to be observed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 483: Symposium E – Power Semiconductor Materials & Devices , 1997 , 241
Copyright
Copyright © Materials Research Society 1998

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References

1. Glass, R. C., Hensall, D., Tsveskov, V. F., Carter, C. H. Jr.,; MRS Bull. 22, 30 (1997).Google Scholar
2. Feldman, D. W., Parker, J. H., Choyke, W. J., Patrick, L.; Phys. Rev. 170, 698 (1968).10.1103/PhysRev.170.698Google Scholar
3. Feldman, D. W., Parker, J. H., Choyke, W. J., Patrick, L.; Phys. Rev. 173, 787 (1968).Google Scholar
4. Nakashima, S., Katahama, H., Nakakura, Y., Mitsuishi, A.; Phys. Rev. B 33, 5721 (1986).Google Scholar
5. Colwell, P. J., Klein, M. V.; Phys. Rev. B 6, 498 (1972).Google Scholar
6. Harima, H., Nakashima, S., Uemura, T.; J. Appl. Phys. 78, 1996 (1995).Google Scholar
7. Nakashima, S., Kisoda, K., Gautier, J. P.; J. Appl. Phys. 75, 5354 (1994).Google Scholar
8. Neudeck, P. G., Powell, J. A.; IEEE Electron. Device Lett. 15, 63 (1994).Google Scholar
9. Si, W., Dudley, M., Glass, R., Tsvetkov, V., Carter, C. Jr.; Electron. Mater. 26, 128 (1997).Google Scholar