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Microstructure and Electrical Properties of PZT Thin Film Heterostructures on Silicon by pulsed laser deposition

Published online by Cambridge University Press:  10 February 2011

Soma Chattopadhyay ,
A. K. Sharma ,
Alex Kvit ,
Chunming Jin ,
C. B. Lee ,
W. J. Collis  and
J. Narayan
Soma Chattopadhyay
Affiliation:
NSF Center for Advanced Materials and Smart Structures, Department of Electrical Engineering, North Carolina Agricultural and Technical State University, NC 27411; North Carolina State University, Materials Science Dept., Raleigh, NC 27695 – 7916.
A. K. Sharma
Affiliation:
NSF Center for Advanced Materials and Smart Structures, Department of Electrical Engineering, North Carolina Agricultural and Technical State University, NC 27411; North Carolina State University, Materials Science Dept., Raleigh, NC 27695 – 7916.
Alex Kvit
Affiliation:
NSF Center for Advanced Materials and Smart Structures, Department of Electrical Engineering, North Carolina Agricultural and Technical State University, NC 27411; North Carolina State University, Materials Science Dept., Raleigh, NC 27695 – 7916.
Chunming Jin
Affiliation:
NSF Center for Advanced Materials and Smart Structures, Department of Electrical Engineering, North Carolina Agricultural and Technical State University, NC 27411; North Carolina State University, Materials Science Dept., Raleigh, NC 27695 – 7916.
C. B. Lee
Affiliation:
Department of Electrical Engineering, North Carolina Agricultural and Technical State University, 551 Mcnair Hall, NC 27411.
W. J. Collis
Affiliation:
Department of Electrical Engineering, North Carolina Agricultural and Technical State University, 551 Mcnair Hall, NC 27411.
J. Narayan
Affiliation:
NSF Center for Advanced Materials and Smart Structures, Department of Electrical Engineering, North Carolina Agricultural and Technical State University, NC 27411; North Carolina State University, Materials Science Dept., Raleigh, NC 27695 – 7916.
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Abstract

We have been successful in the fabrication of (001) oriented epitaxial PZT films on YBCO/SrTiO3/MgO/TiN/Si heterostructures by pulsed laser deposition. The films were observed to be single phase by X-ray diffraction. The deposition parameters were varied to obtain the best epitaxial layer for each of the compounds. Transmission electron microscopy was employed for understanding of the structure, crystallinity and interfaces for each of these epilayers. Dielectric and P-E hysteresis loop measurements were carried out with evaporated Ag electrodes. The dielectric constant for the films was found to be around 380–400. The value of saturation polarization Ps was between 40–50 μC/cm2 and the coercive field Ec varied from 45–55 kV/cm. Integration of PZT films with silicon will be useful for future memory and micromechanical devices.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 596: Symposium Y – Ferroelectric Thin Films VIII , 1999 , 369
Copyright
Copyright © Materials Research Society 2000

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