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Microstructure And Mechanical Properties Of Electroplated Cu Films For Damascene Ulsi Metallization

Published online by Cambridge University Press:  10 February 2011

V. M. Dubin ,
G. Morales ,
C. Ryu  and
S. S. Wong
V. M. Dubin
Affiliation:
Advanced Micro Devices, Sunnyvale, CA 94088, valery.dubin@amd.com
G. Morales
Affiliation:
Advanced Micro Devices, Sunnyvale, CA 94088, valery.dubin@amd.com
C. Ryu
Affiliation:
Center for Integrated Systems, Stanford University, Stanford, CA 94305
S. S. Wong
Affiliation:
Center for Integrated Systems, Stanford University, Stanford, CA 94305
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Abstract

Copper has been deposited for filling sub-0.5 μm trenches by using electroplating. Electroplating with pulse plating conditions provides the high deposition rate (0.5–1 μm/min) and defect-free filling the 0.25 μm trenches and vias of high aspect ratio (>4:1). Enhanced copper electroplating at the trench bottom has been achieved. The median grain size of electroplated copper was measured to be about 1 jim and the lognormal standard deviation is about 0.4 μm. Strong <111> texture was observed in electroplated Cu film. Low stress of electroplated Cu films and excellent adhesion of plated Cu to sputtered Cu seed were observed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 505 , 1997 , 137
Copyright
Copyright © Materials Research Society 1998

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References

REFERENCES

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