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Microstructure and Physical Properties of Ferroelectric-gate Memory Capacitors with Various Buffer Layers

Published online by Cambridge University Press:  21 March 2011

Christine Caragianis-Broadbridge ,
Jin-ping Han ,
T. P. Ma ,
Ann Hein Lehman ,
Wenjuan Zhu ,
Zhijiong Luo ,
Daniel L. Pechkis  and
Bruce L. Laube
Christine Caragianis-Broadbridge
Affiliation:
Department of Physics, Southern Connecticut State Univ., New Haven, CT 06515
Jin-ping Han
Affiliation:
Department of Electrical Engineering, Yale Univ., New Haven, CT 06520
T. P. Ma
Affiliation:
Department of Electrical Engineering, Yale Univ., New Haven, CT 06520
Ann Hein Lehman
Affiliation:
Facility for Electron Microscopy; Trinity College, Hartford, CT 06106
Wenjuan Zhu
Affiliation:
Department of Electrical Engineering, Yale Univ., New Haven, CT 06520
Zhijiong Luo
Affiliation:
Department of Electrical Engineering, Yale Univ., New Haven, CT 06520
Daniel L. Pechkis
Affiliation:
Department of Physics, Southern Connecticut State Univ., New Haven, CT 06515
Bruce L. Laube
Affiliation:
United Technologies Research Center, East Hartford, CT 06108
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Abstract

This paper reports the microstructure and physical properties of ferroelectric capacitors formed from SrBi2Ta2O9(SBT) layers on Si with various buffer layers including jet-vapor deposited silicon nitride, zirconium oxide, hafnium oxide and thermally grown silicon oxide. Results from cross-sectional transmission electron microscopy (X-TEM), energy dispersive spectroscopy (EDS), X-Ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and non-contact atomic force microscopy (nc-AFM) data coupled with capacitance-voltage (C-V) and current- voltage (I-V) data indicate that both the microstructure and physical properties of SBT films deposited on silicon are dependent on the buffer layer material employed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 666: Symposium F – Transport and Microstructural Phenomena , 2001 , F8.5
Copyright
Copyright © Materials Research Society 2001

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References

REFERENCES

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