Hostname: page-component-78c5997874-fbnjt Total loading time: 0 Render date: 2024-11-13T02:26:45.223Z Has data issue: false hasContentIssue false

Microstructure Evolution of On-substrate NiTi Shape Memory Alloy Thin Films

Published online by Cambridge University Press:  01 February 2011

Xi Wang
Affiliation:
Division of Engineering and Applied Sciences, Harvard University, Cambridge, MA 01238, USA
Ann Lai
Affiliation:
Division of Engineering and Applied Sciences, Harvard University, Cambridge, MA 01238, USA
Joost J. Vlassak
Affiliation:
Division of Engineering and Applied Sciences, Harvard University, Cambridge, MA 01238, USA
Yves Bellouard
Affiliation:
Center for Automation Technologies, Rensselaer Polytechnic Institute, Troy, NY 12180, USA
Get access

Abstract

When deposited at room temperature, sputtered NiTi thin films are amorphous and need to be crystallized before they can be used as a functional material. We present the results of an annealing study on substrate-constrained NiTi shape memory thin films. Amorphous films of a NiTi shape memory alloy were deposited by UHV sputtering. Films of thickness 1.0 μm were grown on (100) Si wafers both with and without an LPCVD SiNx barrier. The as-deposited films were annealed in vacuum at temperatures ranging from 500°C to 800°C. The microstructure of the annealed films was characterized using transmission electron microscopy (TEM), energy dispersive X-ray spectroscopy (EDX), and Rutherford back scattering (RBS).

Type
Research Article
Copyright
Copyright © Materials Research Society 2004

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Lee, A.P., Ciarlo, D.R., Krulevitvh, P.A., Lehew, S., Trevino, J. and Northup, M.A., Sensors and Actuators A 54, 755 (1996).Google Scholar
2. Kohl, M., Dittmann, D., Quandt, E. and Winzek, B., Sensors and Actuators A 83, 214 (2000).Google Scholar
3. Makino, E., Mitsuya, T. and Shibata, T., Sensors and Actuators A 88, 256 (2001).Google Scholar
4. Gill, J.J., Chang, D.T., Momoda, L.A. and Carman, G.P., Sensors and Actuators A 93, 148 (2001).Google Scholar
5. Ishida, A., Sato, M., Takei, A. and Miyazaki, S., Mater. Trans. JIM. 36, 1349 (1995).Google Scholar
6. Ishida, A., Sato, M., Takei, A., Nomura, K. and Miyazaki, S., Metall. Mater. Trans. A 27A, 3753 (1996).Google Scholar
7. Ishida, A., Ogawa, K., Sato, M. and Miyazaki, S., Metall. Mater. Trans. A 28A, 1985 (1997).Google Scholar
8. Stemmer, S., Duscher, G., Scheu, C., Heuer, A.H. and Ruhle, M., J. Mater. Res. 12, 1734 (1997).Google Scholar
9. Hung, L.S. and Mayer, J.W., J. Appl. Phys. 60(3), 1002 (1986)Google Scholar
10. Nishida, M., Wayman, C.M., and Honma, T., Metall. Trans. A 17A, 1505 (1986).Google Scholar
11. Chen, J.Z. and Wu, S.K., Thin Solid Films 339, 194 (1999).Google Scholar