Hostname: page-component-78c5997874-ndw9j Total loading time: 0 Render date: 2024-11-13T06:56:12.370Z Has data issue: false hasContentIssue false
  • English
  • Français

Microwave Reflection From The Microwave Photo-Excited High Mobility GaAs/AlGaAs Two-Dimensional Electron System

Published online by Cambridge University Press:  19 November 2013

Tianyu Ye ,
R. G. Mani  and
W. Wegscheider
Tianyu Ye
Affiliation:
Department of Physics and Astronomy, Georgia State University, Atlanta, Georgia 30303, USA.
R. G. Mani
Affiliation:
Department of Physics and Astronomy, Georgia State University, Atlanta, Georgia 30303, USA.
W. Wegscheider
Affiliation:
Laboratorium fur Festkorperphysik, ETH-Zurich, 8093 Zurich, Switzerland.
Get access

Abstract

We examine the microwave reflection from the high mobility GaAs/AlGaAs two-dimensional electron system (2DES). Strong correlations have been observed between the microwave induced magnetoresistance oscillations and the microwave reflection oscillations in a concurrent measurement of the microwave illuminated magnetoresistance and the microwave reflection from the 2DES. The correlations were followed as a function of the microwave frequency and the microwave power dependent. Different existing theories are considered to explain the results.

Keywords

MicrowaveGaAs/AlGaAsreflection
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1617: Symposium 7E – Low-Dimensional Semiconductor Structures , 2013 , pp. 19 - 24
Copyright
Copyright © Materials Research Society 2013 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Mani, R. G., Smet, J. H., von Klitzing, K., Narayanamurti, V., Johnson, W. B., and Umansky, V., Nature 420, 646 (2002).CrossRefGoogle Scholar
Zudov, M. A., Du, R. R., Pfeiffer, L. N., and West, K. W., Phys. Rev. Lett. 90, 046807 (2003).CrossRefGoogle Scholar
Durst, A. C., Sachdev, S., Read, N., and Girvin, S. M., Phys. Rev. Lett. 91, 086803 (2003).Google Scholar
Lei, X. L. and Liu, S. Y., Phys. Rev. Lett. 91, 226805 (2003).CrossRefGoogle Scholar
Dmitriev, I. A., Vavilov, M. G., Aleiner, I. L., Mirlin, A. D., and Polyakov, D. G., Phys. Rev. B 71, 115316 (2005).CrossRefGoogle Scholar
I˜narrea, J. and Platero, G., Phys. Rev. Lett. 94, 016806 (2005); Phys. Rev. B 76, 073311(2007).CrossRefGoogle Scholar
Mani, R. G., Narayanamurti, V., von Klitzing, K., Smet, J. H., Johnson, W. B., and Umansky, V., Phys. Rev. B 70, 155310 (2004); Phys. Rev. B 69, 161306(2004).Google Scholar
Mani, R. G., Smet, J. H., von Klitzing, K., Narayanamurti, V., Johnson, W. B., and Umansky, V., Phys. Rev. Lett. 92, 146801 (2004); Phys. Rev. B 69, 193304(2004).Google Scholar
Mani, R. G., Physica E 22, 1 (2004); Physica E. 25, 189(2004).Google Scholar
Mani, R. G., Phys. Rev. B 72, 075327 (2005); Appl. Phys. Lett. 91, 132103(2007); Appl. Phys. Lett. 92, 102107 (2008); Physica E 40, 1178 (2008) CrossRefGoogle Scholar
Mani, R. G., Johnson, W. B., Umansky, V., Narayanamurti, V., and Ploog, K., Phys. Rev. B 79, 205320 (2009).Google Scholar
Mani, R. G., Gerl, C., Schmult, S., Wegscheider, W., and Umansky, V., Phys. Rev. B 81, 125320 (2010).CrossRefGoogle Scholar
Ramanayaka, A. N., Mani, R. G., and Wegscheider, W., Phys. Rev. B 83, 165303 (2011).CrossRefGoogle Scholar
Mani, R. G., Ramanayaka, A. N., Wegscheider, W., Phys. Rev. B 84, 085308 (2011); Ramanayaka, A. N., Mani, R. G., I˜narrea, J., and Wegscheider, W., Phys. Rev. B 85, 205315(2012).CrossRefGoogle Scholar
Mani, R. G., Hankinson, J., Berger, C., and de Heer, W. A., Nat. Commun. 3, 996 (2012).CrossRefGoogle Scholar
Lei, X. L. and Liu, S. Y., Phys. Rev. B 72, 075345 (2005).CrossRefGoogle Scholar
Fedorych, O. M., Potemski, M., Studenikin, S. A., Gupta, J. A., Wasilewski, Z. R., and Dmitriev, I. A., Phys. Rev. B 81, 201302 (2010).CrossRefGoogle Scholar
Inarrea, Jesus and Platero, Gloria, Nanotechnology 21, 315401 (2010)CrossRefGoogle Scholar
Ye, T., Mani, R.G and Wegscheider, W., Appl. Phys. Lett. 102, 242113 (2013)CrossRefGoogle Scholar