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Mirror-Polishing Residual Damage characterization in the Subsurface of Si Wafers Using N2 Laser /mm-Wave Photoconductivity Amplitude Technique

Published online by Cambridge University Press:  10 February 2011

Y. Ogita ,
Y. Hosoda  and
M. Miyazaki
Y. Ogita
Affiliation:
Kanagawa Institute of Technology, Atsugi, Kanagawa, 243–02 Japan
Y. Hosoda
Affiliation:
Kanagawa Institute of Technology, Atsugi, Kanagawa, 243–02 Japan
M. Miyazaki
Affiliation:
Sumitomo Sitix Corp., Silicon Research & Development Center, Kishima, Saga, 849–05 Japan
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Abstract

The problem is occurring that gate oxide integrity (GOI) might be influenced on the residual subsurface damages induced by mirror polishing. The correlations between mirror polishing conditions, micro roughness, and photoconductivity amplitude (PCA) signals are measured and discussed in a small roughness region of micro roughness Rrms such as 0.095 nm to 0.247 nm. The theoretical analysis shows that PCA signal is possible to reflect a subsurface lifetime.The discussions lead to result that the GOL is mainly dependent on subsurface damages in such small roughness region, PCA signals measured with an UV/mm-wave noncontact technique correlate closely with the GOI yield. It is concluded that the PCA technique makes it possible to characterize subsurface damages and to estimate GOI yield.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 477 , 1997 , 209
Copyright
Copyright © Materials Research Society 1997

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References

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