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A Misfit Dislocation Blocking Mechanism in Continuous InGaAs Layers Grown on Patterned GaAs

Published online by Cambridge University Press:  15 February 2011

G. Patrick Watson ,
Dieter G. Ast ,
Timothy J. Anderson  and
Balu Pathangey
G. Patrick Watson
Affiliation:
AT&T Bell Laboratories, 600 Mountain Ave., Murray Hill, NJ 07974
Dieter G. Ast
Affiliation:
Cornell University, Department of Materials Science and Engineering, Ithaca, NY 14853
Timothy J. Anderson
Affiliation:
University of Florida, Department of Chemical Engineering, Gainesville, FL 32611
Balu Pathangey
Affiliation:
University of Florida, Department of Chemical Engineering, Gainesville, FL 32611
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Abstract

Previous work showed that misfit dislocations were blocked at trench walls in a unique way in InGaAs strained layers grown on GaAs that was patterned and etched to form a series of mesas separated by trenches. A model is developed to explain the behavior of misfit dislocations in this material. The energy cost of extending the threading dislocation segment, which accompanies a misfit dislocation during glide, can impede the motion of these defects if the trench walls are steep enough.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 308: Symposium M1 – Thin Films: Stresses and Mechanical Properties IV , 1993 , 401
Copyright
Copyright © Materials Research Society 1993

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References

REFERENCES

1 Fitzgerald, E. A., Watson, G. P., Proano, R. E., Ast, D. G., Kirchner, P. D., Pettit, G. D., Woodall, J. M., J. Appl. Phys., 65, 2220, (1989).CrossRefGoogle Scholar
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4 Watson, G. P., Ast, D. G., Anderson, T. J., Pathangey, B., unpublished.Google Scholar