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Mobility Improvement Mechanism in a-Si:H TFTs With Smooth a-Si:H/SiNx Interface

Published online by Cambridge University Press:  21 February 2011

K. Takechi ,
H. Uchida  and
S. Kaneko
K. Takechi
Affiliation:
Functional Devices Research Laboratories, NEC Corporation 4–1–1 Miyazaki Miyamae-ku Kawasaki Kanagawa 216, Japan
H. Uchida
Affiliation:
Functional Devices Research Laboratories, NEC Corporation 4–1–1 Miyazaki Miyamae-ku Kawasaki Kanagawa 216, Japan
S. Kaneko
Affiliation:
Functional Devices Research Laboratories, NEC Corporation 4–1–1 Miyazaki Miyamae-ku Kawasaki Kanagawa 216, Japan
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Abstract

The authors have investigated the mechanism for mobility improvement in a-Si:H TFTs with smooth a-Si:H/SiNx interface. SiNx surface roughness was evaluated by Atomic Force Microscope (AFM) measurement with nanometer resolution. The properties for a-Si:H initial growth layer near the a-Si:H/SiNx interface are affected by the SiNx surface roughness. By realizing a smooth SiNx surface, the properties for a-Si:H initial growth layer have been improved and high mobility TFT has been obtained. This high mobility TFT will have a great impact in application to high resolution liquid crystal displays.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 258: Symposium A – Amorphous Silicon Technology – 1992 , 1992 , 955
Copyright
Copyright © Materials Research Society 1992

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References

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