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MOCVD Growth and Structure of PbTiO3 Thin Films

Published online by Cambridge University Press:  21 February 2011

Y. Gao ,
G. Bai ,
K. L. Merkle ,
H. L. M. Chang  and
D. J. Lam
Y. Gao
Affiliation:
Department of Materials and Metallurgical Engineering, New Mexico Institute of Mining and Technology, Socorro, NM 87801
G. Bai
Affiliation:
Materials Science Division, Argonne National Laboratory, Argonne, IL 60439
K. L. Merkle
Affiliation:
Materials Science Division, Argonne National Laboratory, Argonne, IL 60439
H. L. M. Chang
Affiliation:
Materials Science Division, Argonne National Laboratory, Argonne, IL 60439
D. J. Lam
Affiliation:
Materials Science Division, Argonne National Laboratory, Argonne, IL 60439
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Abstract

PbTiO3 thin films grown on (001)MgO and (110)MgO by MOCVD have been characterized by x-ray diffraction and transmission electron microscopy. The PbTiO3 films deposited on (001)MgO under the optimum conditions always show a bi-layer structure. The top layer of the films near the free surface is c-axis oriented with the orientation relationship (001)[100]PbTiO3∥(001)[100]MgO. The bottom layer of the films near the substrate is a-axis oriented with (100)[001]PbTiO3∥(001)[100]MgO. 90° domains were observed, but only in the caxis oriented layers. The thickness of the a-axis oriented layers near the substrate decreases with decreasing the cooling rate. PbTiO3 films deposited on (110) MgO, however, are single-layer, epitaxial films with (101)[001]PbTiO3∥(110)[001]MgO.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 310: Symposium N – Ferroelectric Thin Films III , 1993 , 235
Copyright
Copyright © Materials Research Society 1993

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