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MOCVD Growth of Epitaxial SrTiO3 Thin Films on YBa2 Cu3O7−x/LaAlO3

Published online by Cambridge University Press:  15 February 2011

S. Liang
Affiliation:
EMCORE Corporation, Somerset, NJ 08873;
C. Chern
Affiliation:
EMCORE Corporation, Somerset, NJ 08873;
Z. Q. Shi
Affiliation:
EMCORE Corporation, Somerset, NJ 08873;
Y. Lu
Affiliation:
College of Engineering, Rutgers University, Piscataway, NJ 08855-0909.
P. Lu
Affiliation:
College of Engineering, Rutgers University, Piscataway, NJ 08855-0909.
B. H. Kear
Affiliation:
College of Engineering, Rutgers University, Piscataway, NJ 08855-0909.
A. Safari
Affiliation:
College of Engineering, Rutgers University, Piscataway, NJ 08855-0909.
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Abstract

Strontium titanate (SrTiO3) thin films have been epitaxially grown on YB2Cu3O7−x (YBCO)/LaAlO3 at substrate temperatures of 660 to 700°C. X-ray diffraction (XRD) results indicated that single crystalline SrTiO3 thin films were epitaxially grown on the substrate with <100> orientation perpendicular to the substrates. The compositions of the films with different growth conditions were examined by Rutherford backscattering spectroscopy (RBS) and energy dispersive x-ray spectroscopy (EDX). The ratio of Sr/Ti is in the range of 0.9 to 1.1 for the films with a thickness of 1000–2000Å. The surface morphology of the films and the interfaces of the SrTiO3/YBCO structure were examined by scanning electron microscopy (SEM) and high resolution transmission electron microscopy (HRTEM). Very smooth surface and sharp interface were observed. The superconducting property of the YBCO layer, as measured by ac susceptibility, did not degrade after growth of SrTiO3 film. The dielectric constant as high as 320 was obtained at 100KHz. The leakage current density is less than 1×10−6A/cm2 at 3V operation.

Type
Research Article
Copyright
Copyright © Materials Research Society 1994

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