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Model for Spin Injection into Conjugated Organic Semiconductors

Published online by Cambridge University Press:  15 March 2011

P. Paul Ruden  and
Darryl L. Smith
P. Paul Ruden
Affiliation:
Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis, MN 55455, USA
Darryl L. Smith
Affiliation:
Los Alamos National Laboratory Los Alamos, NM 87545, USA
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Abstract

We present a theoretical model to describe electrical spin injection from a ferromagnetic metal contact into a conjugated organic semiconductor. To achieve significant spin current, the organic semiconductor must be driven far out of local thermal equilibrium by an electric current. Effective spin injection therefore requires that equilibration between the conjugated organic semiconductor and the metallic contact be suppressed by an energy barrier to injection that may be due either to a large Schottky barrier or to an insulating tunnel barrier. The results are compared with simulations for a silicon based device structure. Detection of the injected spin current in the organic semiconductor is also addressed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 825: Symposium G – Semiconductor Spintronics , 2004 , G3.8
Copyright
Copyright © Materials Research Society 2004

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