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A Model of Surface Misorientation Occurring During MBE of GaAs:Be

Published online by Cambridge University Press:  25 February 2011

V.N. Bessolov  and
M.V. Lebedev
V.N. Bessolov
Affiliation:
A.F.Ioffe Phys.-Tech.Institute, 194021, St.Petersburg, Russia
M.V. Lebedev
Affiliation:
A.F.Ioffe Phys.-Tech.Institute, 194021, St.Petersburg, Russia
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Abstract

An impurity adsorption model is proposed accounting for a distortion of the surface morphology of GaAs:Be epitaxial layers and an emergence of misoriented facets. According to the model, the morphology distortion occurs as the surface sublimation energy of the growing face drops down to zero because of adsorption of Be atoms at the layer surface. The model is in good agreement with available experimental data on the surface morphology distortion of GaAs:Be layers grown by MBE.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 263: Symposium F – Mechanisms of Heteroepitaxial Growth , 1992 , 47
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

[1] Iimura, Y., Kawabe, M., Jap.J.Appl.Phys. 25, L81 (1986).Google Scholar
[21 Ivanov, S.V., Kop'ev, P.S., Ledentsov, N.N., J.Cryst.Growth, 108, 661 (1991).Google Scholar
[3] Mochizuki, K., Goto, S., Kakibayashi, H., Kusano, C., Jap.J.Appl.Phys. 29, L1046 (1990).Google Scholar
[4] Herring, C., In: Structure and Properties of Solid Surfaces, ed by Gomer, R., Smith, C.S. (The University of Chicago Press, 1953) p.5.Google Scholar
[5] Herring, C., Phys.Rev. 82, 87 (1951).Google Scholar
[6] Chernov, A.A., In: Modern Crystallography III, Crystal Growth (Springer-Verlag, 1984).Google Scholar
[7] Ohta, K., Kojima, T., Nakagawa, T., J.Cryst.Growth 95, 71 (1985).Google Scholar
[8] Pashley, M.D., Habern, K.W., Gaines, J.M., Appl.Phys.Lett. 58, 406 (1991).Google Scholar
[9] Mochizuki, K., Goto, S., Kakibayashi, H., Kusano, C., Jap.J.Appl. Phys. 29, 1235 (1990).Google Scholar
[10] Chand, N. et al., J.Cryst.Growth, 111, 20 (1991).Google Scholar
[11] Tsui, R.K. et al., J.Appl.Phys. 58, 2570 (1985).Google Scholar