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Modeling and 2D Numerical Simulation of Transient Phenomena in Floating Body Soi Mosfets

Published online by Cambridge University Press:  10 February 2011

A. M. Ionescu ,
F. Chaudier  and
A. Chovet
A. M. Ionescu
Affiliation:
LPCS, ENSERG, 23, rue des Martyrs, BP257, 38016 Grenoble, FRANCE, ionescu@enserg.fr
F. Chaudier
Affiliation:
LPCS, ENSERG, 23, rue des Martyrs, BP257, 38016 Grenoble, FRANCE, ionescu@enserg.fr
A. Chovet
Affiliation:
LPCS, ENSERG, 23, rue des Martyrs, BP257, 38016 Grenoble, FRANCE, ionescu@enserg.fr
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Abstract

This paper presents a numerical-simulation-based investigation of drain current transients in floating body partially and fully depleted n-channel SOI MOSFETs. For both Zerbst-type and overshoot transients, analytical models are developed and validated. An original contribution concerns the detailed study of drain and source junction influences on the transient regime.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 490: Symposium Q – Semiconductor Process & Device Performance Modeling , 1997 , 239
Copyright
Copyright © Materials Research Society 1998

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References

REFERENCES

1. Schroder, D.K., Semiconductor Material and Device Characterization, Wiley, New-York, 1990.Google Scholar
2. Barth, P. and Angeli, J., IEEE Trans. Electron Devices ED–27, p. 2252, 2255 (1982).Google Scholar
3. Schroder, D.K., Solid-State Electronics, 27, p. 247, 251 (1984).Google Scholar
4. Ioannou, D.E., Cristoloveanu, S., Mukherjee, , Mahzari, B., IEEE Trans. El. Dev. Letts., 11, p. 409, 411 (1990).Google Scholar
5. Yasuda, N., Taniguchi, K., Yamaguchi, Y., Nishimura, T., IEEE Trans. Electron Devices, 39, p. 1197, 1202 (1992).Google Scholar
6. Shin, H., Lim, I.-S., Racanelli, M., Huang, W.-L.M., Foerstner, J., Hwang, B.-Y., IEEE Trans. Electron Devices, 43, p. 318, 325 (1996).Google Scholar
7. Ionescu, A.M., Cristoloveanu, S., Munteanu, D., Elewa, T., Gri, M., Solid-State Electronics, 39, p. 1753, 1755 (1996).Google Scholar
8. Schroder, D.K., IEEE Trans. Electron Devices, 44, p. 160–170 (1997).Google Scholar
9. Ionescu, A.M., Chovet, A., Chaudier, F., Electronics Letts. 33, p. 1740–1742 (1997).Google Scholar
10. ATLAS user's manual, Device simulation software. SIL VACO International, 1996.Google Scholar