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Modeling of Collimateti Titanium Nitride Physical Vapor Deposition using a Combined Specular-Diffuse Formulation

Published online by Cambridge University Press:  21 February 2011

A. J. Toprac ,
B. P. Jones ,
J. Schlueter  and
T. S. Cale
A. J. Toprac
Affiliation:
SEMATECH, 2706 Montopolis, Austin, TX 78741–6499
B. P. Jones
Affiliation:
SEMATECH, 2706 Montopolis, Austin, TX 78741–6499 Also with IBM, East Fishkill, New York
J. Schlueter
Affiliation:
SEMATECH, 2706 Montopolis, Austin, TX 78741–6499
T. S. Cale
Affiliation:
Arizona State University, Tempe, AZ 85287–6006
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Re-emissions from surfaces receiving a ballistically transported molecular flux have, in the most general case, a spatial distribution with a combination of specular and diffuse components. The addition of specular transmission in the EVOLVE model allows combined specular-diffuse re-emission to be explicitly modeled. Previous modeling of the step-coverage of sputtered titanium nitride (TiN) films in contact structures produced good predictions with a sub-unity sticking coefficient, 0.6 in value, using a strictly diffuse formulation for material re-emission. New data of collimated sputtered TiN with contact aspect ratios exceeding 4.0 was modeled using the EVOLVE specular-diffuse formulation. The result was more accurate model predictions of experimental data and replacement of the ad hoc empirical parameter adjustment in previous modeling with a more detailed physical description.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 355: Symposium B1 – Evolution of Thin-Film and Surface Structure and Morphology , 1994 , 575
Copyright
Copyright © Materials Research Society 1995

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References

REFERENCES

[1] Bang, D.S., McVittie, J.P., Islamraja, M.M., Saraswat, K.C., Krivocapic, Z., Ra-maswami, S., and Cheung, R.. Profile modeling of collimated Ti physical vapor deposition. Proc. 10th Symp. Plasma Proc, Elec. Chem. Soc, 1994.Google Scholar
[2] Cale, T.S.. Flux distributions in low pressure deposition and etch models. J. Vac. Sci. Technol. B, 9(5): 2551, 1991.Google Scholar
[3] Cale, T.S., Gandy, T.H., and Raupp, G.B.. A fundamental feature scale model for low-pressure deposition processes. J. Vac. Sci. Technol. A, 9(3): 524, 1991.Google Scholar
[4] Cale, T.S. and Raupp, G.B.. A unified line-of-sight model of deposition in rectangular trenches. J. Vac. Sci. Technol. B, 8(6): 1242, 1990.Google Scholar
[5] Cercignani, C.. The Boltzmann Equation and Its Applications. Springer-Verlag, 1988.Google Scholar
[6] Lin, Z., Cale, T.S., Toprac, A.J., Wang, S-Q., and Schlueter, J.. Simulation of collimated flux distributions and titanium nitride physical vapor deposition. Proc. of Adv. Metal. ULSI App. in 1991 1994.Google Scholar
[7] Toprac, A.J., Wang, S-Q., Schlueter, J., and Cale, T.S.. Simulation of collimated titanium nitride physical vapor deposition using EVOLVE. Proc. Adv. Metal. Dev. and Circuits-Sci., Tech. and Manuf., MRS v. 337: 547, 1994.Google Scholar