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Modeling of Cu Surface Precipitation and Out-Diffusion from Silicon Wafers

Published online by Cambridge University Press:  01 February 2011

Hsiu-Wu Guo  and
Scott T. Dunham
Hsiu-Wu Guo
Affiliation:
hwg@u.washington.edu, University of Washington, Electrical Engineering, University of Washington, Dept. of Electrical Engineering,, Paul Allen Center - Room AE100R, Seattle, WA, 98195-2500, United States, (206)616-4450
Scott T. Dunham
Affiliation:
dunham@ee.washington.edu, University of Washington, Electrical Engineering, Seattle, WA, 98195-2500, United States
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Abstract

Copper is one of the most concerned contaminants for silicon process, due to its detrimental effects on device performance if present in active regions. Gettering of Cu by changing the surface conditions at the wafer surface is commonly used. Acceleration of Cu out-diffusion and surface precipitation was observed with changes of the surface potential, which could be altered by both existing Cu precipitates and organics at the surface.In this work, physically based models are developed to describe the Cu evolution at the wafer surface including the dependence of surface potential. These models are verified by comparison to the experiment measurements from Ohkubo et al. [Jpn. J.Appl. Phys. 1 44, 3793 (2005)].

Keywords

Cudiffusionsurface reaction
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 994: Symposium F – Semiconductor Defect Engineering–Materials, Synthetic Structures and Devices II , 2007 , 0994-F09-01
Copyright
Copyright © Materials Research Society 2007

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References

1. Ohkubo, Y., Matsumoto, K., and Nagai, K., Jpn. J. Appl. Phys. 44, 3793 (2005).Google Scholar
2. McCarthy, C., Miyazaki, M., Horie, H., Okamoto, S. and Tsuya, H., edited by Huff, H.R., Gösele, U. and Tsuya, H. (Electrochemical Society, Pennington, NJ, 1998), p629.Google Scholar
3. Shabani, M.B., Okuuchi, S. and Shimanuki, Y., in Analytical and Diagnostic Techniques for Semiconductor Materials, Devices and Processes, edited by Kolbesen, B. O., Claeys, C., Stallhofer, P., Tardif, F., Benton, J.L., Rai-Choudhury, P., Shaffner, T.J., Shroder, D.K. and Tajima, M. (Electrochemical Society, Pennington, NJ, 1999), 510.Google Scholar
4. Thompson, R.D. and Tu, K. N., Appl. Phys. Lett. 41, 440 (1982).Google Scholar
5. Hall, R. and Racette, J., J. Appl. Phys. 35, 379 (1964).Google Scholar
6. Meek, R.L. and Seidel, T., J. Phys. Chem. Solids 36, 731 (1975).Google Scholar
7. Wagner, P., Hage, H., Prigge, H., Prescha, T., and Weber, J., in Proceedings of the Sixth International Symposium on Silicon Materials Science and Technology: Semiconductor Silicon 1990, edited by Huff, H., Barraclough, K., and Chikawa, J. I. (Electrochemical Society, Pennington, NJ, 1990), 675.Google Scholar
8. Dunham, S.T., J. Electrochem. Soc. 142, 2823 (1995).Google Scholar
9. Guo, H.-W. and Dunham, S.T., Appl. Phys. Lett. 89, 182106 (2006).Google Scholar
10. Dunham, S.T., Appl. Phys. Lett. 64, 464 (1993).Google Scholar