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Modeling of Substrate Bias Effect on the Compositional Variations in Sputter-Deposited TiB2+x Diffusion Barrier Thin Films

Published online by Cambridge University Press:  10 February 2011

M. Sinder ,
G. Sade  and
J. Pelleg
M. Sinder
Affiliation:
Department of Materials Engineering, Ben-Gurion University of the Negev, Beer-Sheva, 84105, Israel
G. Sade
Affiliation:
Department of Materials Engineering, Ben-Gurion University of the Negev, Beer-Sheva, 84105, Israel
J. Pelleg
Affiliation:
Department of Materials Engineering, Ben-Gurion University of the Negev, Beer-Sheva, 84105, Israel
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Abstract

Sputter-deposited titanium boride diffusion barrier layers have been found to be boron enriched when r.f substrate bias was applied. In the present experiments titanium boride was deposited by co-sputtering from Ti and B pure targets in Ar discharge and the voltage of r.f. self-bias was in the range of 100 – 250 V. Films deposited were found by Auger electron spectroscopy to be B enriched with increasing bias voltage at constant Ti and B sputtering rates. A model of the sputter-deposition conditions was developed to predict the composition and the thickness of the growing film. The model explains the experimental results indicating that B enrichment is mainly a result of differential resputtering of the components from the growing film by energetic Ar ions captured from the r.f discharge.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 529: Symposia BB – Computational & Mathematical Models of Microstructural Evolution , 1998 , 145
Copyright
Copyright © Materials Research Society 1998

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