Hostname: page-component-78c5997874-v9fdk Total loading time: 0 Render date: 2024-11-10T08:54:15.150Z Has data issue: false hasContentIssue false
  • English
  • Français

Modeling of the Ion-Beam Growth of Covalently-Bonded Diamondlike Materials

Published online by Cambridge University Press:  10 February 2011

H. C. Hofsäss ,
M. Sebastian ,
H. Feldermann ,
R. Merk  and
C. Ronning
H. C. Hofsäss
Affiliation:
Fakultät für Physik, Universität Konstanz, D-78457 Konstanz, Germany
M. Sebastian
Affiliation:
Fakultät für Physik, Universität Konstanz, D-78457 Konstanz, Germany
H. Feldermann
Affiliation:
Fakultät für Physik, Universität Konstanz, D-78457 Konstanz, Germany
R. Merk
Affiliation:
Fakultät für Physik, Universität Konstanz, D-78457 Konstanz, Germany
C. Ronning
Affiliation:
Fakultät für Physik, Universität Konstanz, D-78457 Konstanz, Germany
Get access

Abstract

A characteristic ion energy and substrate temperature dependence for the formation of tetra-hedral amorphous carbon (ta-C), cubic boron nitride (c-BN) and related diamondlike materials by ion deposition has been experimentally observed. We present an analytical model for diamondlike film growth that describes the transient modification of the film structure by successive individual ion impact events. Each ion impact is treated as a cylindrical thermal spike with a finite initial width, taking into account energy loss and energy dissipation processes. We show that rearrangement of atoms during a cylindrical spike is the dominant mechanism leading to the formation of the diamondlike phase. The model explains quantitatively the observed ion energy dependence of the sp3 bond fraction in ta-C, as well as the broad range of ion energies for which c-BN growth is observed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 498: Symposium AA – Covalently Bonded Disordered Thin-Film Materials , 1997 , 129
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Hofsäss, H., Ronning, C., in Singh, J., Copley, S. M., Mazumder, J. (eds.), Proc, 2nd Int, Conf. on Beam Processing of Advanced Materials, (ASM International, Materials Park 1996) p. 29 Google Scholar
2. Mirkarimi, P.B., McCarty, K.F., Medlin, D.L.: Mat. Sei. Eng. Rep. (1997) to be publishedGoogle Scholar
3. Ronning, C., Dreher, E., Thiele, J.U., Oelhafen, P., Hofsäss, H., Diam. Relat. Mater. 6, 830 (1997)Google Scholar
4. Hofsäss, H., Feldermann, H., Sebastian, M., Ronning, C., Phys. Rev. B 55, 13230 (1997)Google Scholar
5. Uhlmann, S., Ph.D thesis, University Chemnitz (1997)Google Scholar
6. Robertson, J., Diam. Relat. Mater. 2, 984 (1993)Google Scholar
7. Davis, C.A., Thin Solid films 226, 30 (1993)Google Scholar
8. McKenzie, D.R., Muller, D., Pailthorpe, B.A., Phys. Rev. Lett. 67, 773 (1991)Google Scholar
9. Tamor, M.A. in Feldman, A., Tzeng, Y., Yarbrough, W.A., Yoshikawa, M., Murakawa, M. (eds), Applications of Diamond Films and Related Materials: Third International Conference, NIST Special Publication 885 (NIST, Gaithersburg 1995) p. 691 Google Scholar
10. McKenzie, D.R., J. Vac. Sci. Technol. B 11, 1928 (1993)Google Scholar
11. Marks, N.A., McKenzie, D.R., Pailthorpe, B.A., Phys. Rev. B 53, 4117 (1996)Google Scholar
12. Sullivan, J.P., Friedmann, T.A., Tallant, D.R., Mikkalson, J., Rieger, D.J., Baca, A.G., Martinez-Miranda, L.J., Appl. Phys. Lett. (1997) to be publishedGoogle Scholar
13. Hofsäss, H., Feldermann, H., Merk, R., Sebastian, M. and Ronning, C., App. Phys. A, Materials Science & Processing (1998) to be publishedGoogle Scholar
14. Lifshitz, Y., Lempert, G.D., Grossman, E., Phys. Rev. Lett. 72, 2753 (1994)Google Scholar
15. Hahn, J., Richter, F., Pintaske, R., Roder, M., Schneider, E., Welzel, T., Surf. Coat. Technol. 92, 129(1997)Google Scholar
16. Taylor, C.A. II and Clarke, R., Appl. Phys. Lett. 71, (1997) to be publishedGoogle Scholar
17. Feldermann, H., Merk, R., Sebastian, M., Restie, M., Ronning, C., Hofsäss, H., Appl. Phys. Lett. (1998) to be publishedGoogle Scholar
18. Kuroyanagi, A., J. Appl. Phys. 68, 5567 (1990)Google Scholar
19. Ronning, C., Dreher, E., Feldermann, H., Sebastian, M., Zweck, J., Fischer, R., Hofsäss, H., Mat. Res. Soc. Symp. Proc. 449, 331 (1997)Google Scholar
20. Ronning, C., Hofsäss, H. in Ravi, K.V., Dismukes, J.P. (eds.), Diamond Materials IV. Proc. 4th Int. Symposium. (The Electrochemical Society, Pennington 1995) pp. 359–364 Google Scholar
21. Hofsäss, H., Ronning, C., Griesmeier, U., Gross, M., Reinke, S., Kuhr, M., Appl. Phys. Lett. 67, 46 (1995)Google Scholar
22. Seitz, F., Koehler, J.S.: Solid State Physics 2, 305 (1956)Google Scholar
23. Ziegler, J.F., Biersack, J.P., Littmark, U., The Stopping and Ranges of Ions in Matter. Vol. 1 (Pergamon, Oxford, 1985)Google Scholar