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Modeling Pattern Effects in Oxide CMP

Published online by Cambridge University Press:  01 February 2011

R. Rzehak
R. Rzehak*
Affiliation:
Infineon Technologies SC300 GmbH & Co.OHG, Königsbrücker Str. 180, 01099 Dresden, Germany
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Abstract

We present an extension of the density-stepheight model for pattern effects in oxide CMP which accounts for the roughness of the polishing pad's surface. The model is compared to polishing data for processes using different pressure and speed. Agreement with the data is improved especially in the initial regime of polishing before the pad contacts the down areas.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 867: Symposium W – Chemical-Mechanical Planarization-Integration, Technology and Reliability , 2005 , W5.10
Copyright
Copyright © Materials Research Society 2005

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References

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