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Modelling and Characterization of Submicron P-Channel MOSFET's Locally Degraded by Hot Carrier Injection

Published online by Cambridge University Press:  15 February 2011

A. Hassein-Bey  and
S. Cristoloveanu
A. Hassein-Bey
Affiliation:
Laboratoire de Physique des Composants à Semiconducteurs (UA-CNRS) ENSERG, BP 257, 38016 Grenoble Cedex, France
S. Cristoloveanu
Affiliation:
Laboratoire de Physique des Composants à Semiconducteurs (UA-CNRS) ENSERG, BP 257, 38016 Grenoble Cedex, France
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Abstract

The influence of the localized defective channel region formed by hot carrier injection on the basic characteristics of P-channel transistors is systematically investigated and modeled. A practical method of parameter extraction in stressed P-MOSFET's is proposed. It is based on the comparison of Ids(Vg) characteristics before and after stress in weak and strong inversion.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 225: Symposium G – Materials Reliability Issues in Microelectronics , 1991 , 247
Copyright
Copyright © Materials Research Society 1991

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