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Modelling of Sb Activation in Ultra-shallow Junction Regions in Bulk and Strained Si

Published online by Cambridge University Press:  01 February 2011

Yan Lai ,
Nicolas Cordero  and
James C Greer
Yan Lai
Affiliation:
yan.lai@tyndall.ie, Tyndall National Insitute, Electronic Theory Group, Lee Maltings, Prospect Row, Cork, N/A, Ireland, 353-21-4904113
Nicolas Cordero
Affiliation:
nicolas.cordero@tyndall.ie, Tyndall National Institute, Cork, N/A, Ireland
James C Greer
Affiliation:
jim.greer@tyndall.ie, Tyndall National Institute, Cork, N/A, Ireland
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Abstract

The activation behaviour of dopants in ultra-shallow junctions on strained silicon is investigated from a simulation vantage point. Process models available in commercial simulation tools are typically developed for junctions formed with high implantation energies (> 50 keV) and for long anneal times. Hence the question arises as to whether these models and parameter sets can accurately predict the active profile for highly doped, ultra-shallow junctions formed thin strained silicon layers using short rapid thermal anneals (RTA, <10 seconds) at temperatures below 800 °C. By incorporating the results from experimental data, we develop modified models allowing for improved predictions of antimony activation within both bulk and strained silicon.

Keywords

simulationactivation analysisstress/strain relationship
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1070: Symposium E – Doping Engineering for Front-End Processing , 2008 , 1070-E03-05
Copyright
Copyright © Materials Research Society 2008

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References

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