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Modification of Semiconductor-Dielectric Interface in Organic Light-emitting Field-effect Transistors

Published online by Cambridge University Press:  31 January 2011

Yan Wang ,
Ryotaro Kumashiro ,
Naoya Komatsu  and
Katsumi Tanigaki
Yan Wang
Affiliation:
wang@sspns.phys.tohoku.ac.jp, Tohoku University, Physics department, Sendai, Japan
Ryotaro Kumashiro
Affiliation:
rkuma@sspns.phys.tohoku.ac.jp, Tohoku University, Physics department, Sendai, Japan
Naoya Komatsu
Affiliation:
komatsu@sspns.phys.tohoku.ac.jp, Tohoku University, Physics Department, Sendai, Japan
Katsumi Tanigaki
Affiliation:
tanigaki@sspns.phys.tohoku.ac.jp, World Premier International Research Center, Sendai, Japan
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Abstract

In this work, ambipolar rubrene single crystal field-effect transistors (FETs) with PMMA modification layer and Au/Ca as electrodes were fabricated. The electron mobility was studied in these devices. PMMA modification layer on the surface of SiO2 is necessary for electron behavior. We found that the device with PMMA modified insulator and Au-Ca asymmetric metals possessed hole mobility and electron mobility of 1.27 and 0.017 cm−2/Vs, respectively. Furthermore, the shift of light emitting with applied gate voltage was observed in this device.

Keywords

semiconductingopticaldevices
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1154: Symposium B – Concepts in Molecular and Organic Electronics , 2009 , 1154-B05-93
Copyright
Copyright © Materials Research Society 2009

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