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Modification of structure and optical property of ZnO nanowires by Ga ion beam

Published online by Cambridge University Press:  31 January 2011

Yao Cheng ,
Yao Liang ,
Ming Lei ,
Siu Kong Hark  and
Ning Wang
Yao Cheng
Affiliation:
ifpossiblecheng@gmail.com, the Hong Kong University of Science and Technology, Physics Department, the William Mong Institution of Nano Science and Technology, Hong Kong, Hong Kong
Yao Liang
Affiliation:
yliang0625@hotmail.com, the Chinese University of Hong Kong, Physics Department, Hong Kong, Hong Kong
Ming Lei
Affiliation:
leimingiphy@yahoo.com.cn, the Hong Kong University of Science and Technology, Physics Department, the William Mong Institution of Nano Science and Technology, Hong Kong, Hong Kong
Siu Kong Hark
Affiliation:
skhark@sun1.phy.cuhk.edu.hk, the Chinese University of Hong Kong, Physics Department, Hong Kong, Hong Kong
Ning Wang
Affiliation:
phwang@ust.hk, the Hong Kong University of Science and Technology, Physics Department, the William Mong Institution of Nano Science and Technology, Hong Kong, Hong Kong
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Abstract

Based on the focused ion beam (FIB) technology, we have prepared ZnO nanowires containing periodic nano-sized structures by an ultra thin Ga ion beam. ZnO nanowires can keep a good crystal quality after Ga ion bombardment. The cathodoluminescence (CL) spectroscopy study of the Ga-doped ZnO nanowires at low temperatures shows that the Ga doping effect can largely suppress the green emission that may mainly originate from the defects on the surfaces of ZnO nanowires.

Keywords

nanostructureII-VIoptical properties
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1201: Symposium H – Zinc Oxide and Related Materials-2009 , 2009 , 1201-H07-05
Copyright
Copyright © Materials Research Society 2010

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