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Modification of the electronic properties of a-Si1-xCx:H by Fe+ ion implantation

Published online by Cambridge University Press:  17 March 2011

T. Tsvetkova ,
S. Balabanov ,
B. Amov ,
Ch. Angelov ,
J. Zuk ,
D. Maczka ,
G.J. Adriaenssens  and
K. Iakoubovskii
T. Tsvetkova
Affiliation:
Institute of Solid State Physics, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee, 1784 Sofia, Bulgaria
S. Balabanov
Affiliation:
Institute of Solid State Physics, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee, 1784 Sofia, Bulgaria
B. Amov
Affiliation:
Institute of Nuclear Research and Nuclear Energy, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee, 1784 Sofia, Bulgaria
Ch. Angelov
Affiliation:
Institute of Nuclear Research and Nuclear Energy, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee, 1784 Sofia, Bulgaria
J. Zuk
Affiliation:
Maria Curie-Sklodowska University, Pl. M.Curie-Sklodowskiej 1, Lublin, Poland
D. Maczka
Affiliation:
Maria Curie-Sklodowska University, Pl. M.Curie-Sklodowskiej 1, Lublin, Poland
G.J. Adriaenssens
Affiliation:
Halfgeleiderfysica, University of Leuven, B-3001 Leuven, Belgium
K. Iakoubovskii
Affiliation:
Halfgeleiderfysica, University of Leuven, B-3001 Leuven, Belgium
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Abstract

The electrical and optical properties of hydrogenated amorphous silicon-carbide alloy films (a-Si1-xCx:H), modified by Fe+ ion implantation (D = 1×1016 - 1×1017 cm-2), have been investigated. Optical transmission spectra have been measured in the visible range (400-900 nm) and considerable absorption edge shift to the longer wavelength region has been registered, together with well-defined decrease of transmittance in the whole measured range. These effects are increased with the dose and are similar for samples with different carbon content (x1=0.08 and x2=0.15). Room temperature (RT) surface electrical conductivity is also increased by Fe+ implantation and the effect is most pronounced for the highest doses (D ~ 1017cm-2). The temperature dependence of the conductivity was measured in the temperature range from RT to 250 oC. The activation energy is considerably reduced and the effect is again strongest for the highest doses. From the above results we conclude that high doses Fe+ implantation in a-Si1-xCx:H affects both the localised states deep in the gap and the shallow states in the band tails.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 647: Symposium O – Ion Beam Synthesis & Processing of Advanced Materials , 2000 , O5.13
Copyright
Copyright © Materials Research Society 2001

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