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Modifications in the Course of Reaction Between Co and GaAs Due To The Presence of a Ge Film

Published online by Cambridge University Press:  26 February 2011

M. Genut  and
M. Eizenberg
M. Genut
Affiliation:
Dpt. of Materials Engineering and Solid State Institute, Technion-Israel Institute of Technology, Haifa 32000 Israel
M. Eizenberg
Affiliation:
Dpt. of Materials Engineering and Solid State Institute, Technion-Israel Institute of Technology, Haifa 32000 Israel
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Abstract

Modifications in the course of reaction between Co thin films and single crystal GaAs substrate due to the addition of a Ge film either on top or below the metal layer have been studied. The microstructure and phase formation for the systems: Co/GaAs, Co/Ge/GaAs, and Ge/Co/GaAs have been studied by Auger electron spectroscopy, transmission electron microscopy and X-ray diffraction.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 102 , 1987 , 237
Copyright
Copyright © Materials Research Society 1988

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References

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