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Modulation of Growing Surface with Atomic Hydrogen and Excited Argon to Fabricate Narrow Gap a-Si:H

Published online by Cambridge University Press:  10 February 2011

W. Futako ,
I. Shimizu  and
C. M. Fortmann
W. Futako
Affiliation:
Tokyo Institute of Technology, The Graduate School, 4259 Nagatsuta, Midori-ku, Yokohama, Japan 226
I. Shimizu
Affiliation:
Tokyo Institute of Technology, The Graduate School, 4259 Nagatsuta, Midori-ku, Yokohama, Japan 226
C. M. Fortmann
Affiliation:
State University of New York at Stony Brook, Department of Applied Mathematics and Statistics, Stony Brook, NY, 11794-3600
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Abstract

Hydrogenated amorphous silicon (a-Si:H) with a gaps narrower than 1.7 eV were made by repeating the deposition of a thin layer (1–3 nm thick) and the treatment of growing surface with a mixture of H and Ar*. Crystallization induced by permeation of hydrogen into the subsurface at high substrate temperature (>200C) was efficiently prevented by treating with a mixture of H and Ar*. The activation of growing surface may arise from releasing a part of hydrogen on surface by treating with Ar*. High quality a-Si:H films containing hydrogen of 3 atom % with a gap of 1.6 eV were made by chemical annealing with a mixture of H and Ar*.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 420: Symposium A – Amorphous Silicon Technology-1996 , 1996 , 431
Copyright
Copyright © Materials Research Society 1996

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References

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