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Modulator Structure Using In(As, P)/lnP Strained Multiple Quantum Wells Grown By Gas-Source MBE

Published online by Cambridge University Press:  21 February 2011

H. Q. Hou ,
T. P. Chin ,
B. W. Liang  and
C. W Tu
H. Q. Hou
Affiliation:
Department of Electrical and Computer Engineering, University of California at San Diego, La Jolla, CA 92093–0407
T. P. Chin
Affiliation:
Department of Electrical and Computer Engineering, University of California at San Diego, La Jolla, CA 92093–0407
B. W. Liang
Affiliation:
Department of Electrical and Computer Engineering, University of California at San Diego, La Jolla, CA 92093–0407
C. W Tu
Affiliation:
Department of Electrical and Computer Engineering, University of California at San Diego, La Jolla, CA 92093–0407
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Abstract

In(As, P)/InP strained multiple quantum wells (SMQW's) were grown with gas-source molecular-beam epitaxy (GSMBE). A successful control of the As composition was achieved over a wide range by using two techniques. High-quality samples were characterized structurally and optically by x-ray diffractometry, transmission electron microscopy (TEM), photoluminescence (PL) and absorption measurements. Excitonic emission energy and the critical layer thickness of In(As, P)/InP SMQW's are calculated as a function of the As composition. The results show that 1.06, 1.3 and 1.55 μm excitonic emission can be achieved at room temperature using this material system. We also discuss the perspective of using In(As, P)/InP SMQW's for modulator application.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 228: Symposium N – Materials for Optical Information Processing , 1991 , 231
Copyright
Copyright © Materials Research Society 1992

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References

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